Dan Fang, Qiang Zhang, Han Li, Kaihui Gu. Reflected High Energy Electron Diffraction Optimizing GaSb Film Growth Process[J]. Laser & Optoelectronics Progress, 2020, 57(23): 231603
- Laser & Optoelectronics Progress
- Vol. 57, Issue 23, 231603 (2020)
Fig. 1. GaSb film grown with epitaxial technology
Fig. 2. Changes of patterns on RHEED screen during deoxidation process. (a) Before deoxidation; (b) start deoxidizing; (c) deoxidizing layer; (d) end of deoxidation
Fig. 3. RHEED curve(Ga source is 1020 ℃ and Sb source is 900 ℃)
Fig. 4. Influence of substrate temperature on film growth. (a) 600 ℃; (b) 580 ℃; (c) 520 ℃
Fig. 5. RHEED patterns of GaSb films grown at 520 ℃. (a) No growth; (b) start to grow; (c) grow for a period of time; (d) grow complete
Fig. 6. XRD curve of GaSb film
Fig. 7. Surface morphology of GaSb film grown at different beam-to-current ratios. (a) Beam-to-current ratio is 1; (b) beam-to-current ratio is 3; (c) beam-to-current ratio is 5; (d) beam-to-current ratio is 8
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Table 1. Relationship between growth parameters and half peak width of films
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