• Laser & Optoelectronics Progress
  • Vol. 54, Issue 1, 13102 (2017)
Xiao Heping*, Guo Guanjun, Ma Xiangzhu, and Zhang Shuangxiang
Author Affiliations
  • [in Chinese]
  • show less
    DOI: 10.3788/lop54.013102 Cite this Article Set citation alerts
    Xiao Heping, Guo Guanjun, Ma Xiangzhu, Zhang Shuangxiang. Influence of Thermal Annealing on Photoelectrical Properties of Indium-Tin Oxide Thin Films[J]. Laser & Optoelectronics Progress, 2017, 54(1): 13102 Copy Citation Text show less
    References

    [1] Shigesato Y, Takaki S, Haranoh T. Electrical and structural properties of low resistivity tin-doped indium oxide films[J]. Journal of Applied Physics, 1992, 71(7): 3356-3364.

    [2] Sun Zhaoqi, Cao Chunbin, Song Xueping, et al. Study on ellipsometric spectra of ITO film[J]. Acta Optica Sinica, 2008, 28(2): 403-408.

    [3] Zhang Yonghui, Guo Weiling, Qin Yuan, et al. Effects of ITO on proprieties of novel AlGaInP red LED[J]. Acta Optica Sinica, 2010, 30(8): 2402-2405.

    [4] Aliyu Y H, Morgan D V, Thomas H, et al. AlGaInP LEDs using reactive thermally evaporated transparent conducting indium tin oxide (ITO)[J]. Electron Lett, 1995, 31(25): 2210-2212.

    [5] Hsu S C, Wuu D S, Zheng X, et al. High-performance AlGaInP/GaAs light-emitting diodes with a carbon-doped GaP/indium-tin oxide contact layer[J]. Jpn J Appl Phys, 2008, 47(9): 7023-7025.

    [6] Pla J, Tamasi M, Rizzoli R, et al. Optimization of ITO layers for applications in a-Si/c-Si heterojunction solar cells[J]. Thin Solid Films, 2003, 425(1): 185-192.

    [7] Yuan Guangcai, Xu Zheng, Zhang Fujun, et al. Fabrication of ITO film and influence to electroluminescent devices through RTA disposing[J]. Journal of Optoelectronics Laser, 2007, 18(8): 903-906.

    [8] Ma Ying, Han Wei, Zhang Fanghui. Effects of annealing temperature on the structure and sheet resistance of ITO films with XRD[J]. Chinese Journal of Liquid Crystals and Display, 2005, 20(4): 314-317.

    [9] Ma J, Zhang D H, Zhao J, et al. Preparation and characterization of ITO films deposited on polyimide by reactive evaporation at low temperature[J]. Appl Surf Sci, 1999, 151(3): 239-243.

    [10] Wang P, Cao B, Wei W, et al. Improved light extraction of GaN-based light-emitting diodes by ITO patterning with optimization design[J]. Solid State Electron, 2010, 54(3): 283-287.

    [11] Xu Z, Chen P, Wu Z L, et al. Correlation between microstructure and electrical, optical properties of thermal annealed ITO thin films[J]. J Mater Sci-Mater El, 2014, 25(5): 2287-2291.

    [12] Paine D C, Whitson T, Janiac D, et al. A study of low temperature crystallization of amorphous thin film indium-tin-oxide[J]. Journal of Applied Physics, 1999, 85(12): 8445-8450.

    [13] Xu J, Yang Z, Zhang X, et al. Grain size control in ITO targets and its effect on electrical and optical properties of deposited ITO films[J]. J Mater Sci-Mater El, 2014, 25(2): 710-716.

    [14] Hammad T M. Effect of annealing on electrical, structural, and optical properties of sol-gel ITO thin films[J]. Phys Status Solidi A, 2009, 206(9): 2128-2132.

    [15] Alam M J, Cameron D C. Optical and electrical properties of transparent conductive ITO thin films deposited by sol-gel process[J]. Thin solid films, 2000, 377(1): 455-459.

    [16] Nguyen T P, Le Rendu P, Dinh N N, et al. Thermal and chemical treatment of ITO substrates for improvement of OLED performance[J]. Synthetic Met, 2003, 138(1): 229-232.

    [17] Alam M J, Cameron D C. Investigation of annealing effects on sol-gel deposited indium tin oxide thin films in different atmospheres[J]. Thin Solid Films, 2002, 420: 76-82.

    CLP Journals

    [1] Zhang Yijun, Zhang Xicheng, Luan Mingyu, Zeng Tao, Huang Jiamu. Preparation and Optical Property of NbSiN Films[J]. Laser & Optoelectronics Progress, 2017, 54(3): 33101

    Xiao Heping, Guo Guanjun, Ma Xiangzhu, Zhang Shuangxiang. Influence of Thermal Annealing on Photoelectrical Properties of Indium-Tin Oxide Thin Films[J]. Laser & Optoelectronics Progress, 2017, 54(1): 13102
    Download Citation