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    Journals >Laser & Optoelectronics Progress >Volume 54 >Issue 1 >Page 13102 > Article
    • Laser & Optoelectronics Progress
    • Vol. 54, Issue 1, 13102 (2017)
    Influence of Thermal Annealing on Photoelectrical Properties of Indium-Tin Oxide Thin Films
    Xiao Heping*, Guo Guanjun, Ma Xiangzhu, and Zhang Shuangxiang
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    DOI: 10.3788/lop54.013102 Cite this Article Set citation alerts
    Xiao Heping, Guo Guanjun, Ma Xiangzhu, Zhang Shuangxiang. Influence of Thermal Annealing on Photoelectrical Properties of Indium-Tin Oxide Thin Films[J]. Laser & Optoelectronics Progress, 2017, 54(1): 13102 Copy Citation Text show less
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    Xiao Heping, Guo Guanjun, Ma Xiangzhu, Zhang Shuangxiang. Influence of Thermal Annealing on Photoelectrical Properties of Indium-Tin Oxide Thin Films[J]. Laser & Optoelectronics Progress, 2017, 54(1): 13102
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