• Photonics Research
  • Vol. 5, Issue 6, 000536 (2017)
Xi Wang, Xing Jiang, Qi You, Jun Guo, Xiaoyu Dai, and Yuanjiang Xiang*
Author Affiliations
  • SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
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    DOI: 10.1364/prj.5.000536 Cite this Article Set citation alerts
    Xi Wang, Xing Jiang, Qi You, Jun Guo, Xiaoyu Dai, Yuanjiang Xiang. Tunable and multichannel terahertz perfect absorber due to Tamm surface plasmons with graphene[J]. Photonics Research, 2017, 5(6): 000536 Copy Citation Text show less
    (a) Perfect absorber based on the graphene–1DPC composite structure, and (b) a dissymmetric cavity, enclosed by a sheet of graphene and a DBR.
    Fig. 1. (a) Perfect absorber based on the graphene–1DPC composite structure, and (b) a dissymmetric cavity, enclosed by a sheet of graphene and a DBR.
    (a) Absorption of the graphene–1DPC configuration (red line is the absorption of our structure without graphene), (b) the phase of rGra (black dotted line), rDBR (red dot-dashed line), and rGrarDBR exp(2iϕ) (blue line) as a function of frequency, and (c) reflection coefficient rGra for a graphene–top-layer interface (black line), and reflection coefficient rDBR for a top-layer–1DPC interface (red line), as a function of frequency.
    Fig. 2. (a) Absorption of the graphene–1DPC configuration (red line is the absorption of our structure without graphene), (b) the phase of rGra (black dotted line), rDBR (red dot-dashed line), and rGrarDBRexp(2iϕ) (blue line) as a function of frequency, and (c) reflection coefficient rGra for a graphene–top-layer interface (black line), and reflection coefficient rDBR for a top-layer–1DPC interface (red line), as a function of frequency.
    (a) Normalized electric field profile distributions in the multilayer configuration without the covering of graphene, and (b) normalized electric field profile distributions in the multilayer configuration with the covering of single-layer graphene.
    Fig. 3. (a) Normalized electric field profile distributions in the multilayer configuration without the covering of graphene, and (b) normalized electric field profile distributions in the multilayer configuration with the covering of single-layer graphene.
    (a) Absorption as a function of frequency at different Fermi energies in the graphene–1DPC composite configuration; the tunability of our absorber based on changing (b) the dielectric constant and (c) thickness of the top layer when EF=0.85 eV; (d) the tunability based on changing the dielectric constant and thickness of the top layer at the same time.
    Fig. 4. (a) Absorption as a function of frequency at different Fermi energies in the graphene–1DPC composite configuration; the tunability of our absorber based on changing (b) the dielectric constant and (c) thickness of the top layer when EF=0.85  eV; (d) the tunability based on changing the dielectric constant and thickness of the top layer at the same time.
    Simulated absorption spectra for (a) TE and (b) TM wave as a function of incident angle and frequency. Here, EF=0.85 eV, ds=λc/(4ns).
    Fig. 5. Simulated absorption spectra for (a) TE and (b) TM wave as a function of incident angle and frequency. Here, EF=0.85  eV, ds=λc/(4ns).
    (a) Three and four perfect absorption peaks at the same time; (b) two absorption peaks (red line) and the phase of rGRarDBRexp(2iϕ) (blue line) as a function of frequency.
    Fig. 6. (a) Three and four perfect absorption peaks at the same time; (b) two absorption peaks (red line) and the phase of rGRarDBRexp(2iϕ) (blue line) as a function of frequency.
    (a) Absorption as a function of frequency when the top layer is chosen as fused quartz, da=51.75 μm, ds=db=38.34 μm, and the other parameters are the same as in Fig. 2; (b) the manipulation of our absorber based on changing the thickness of the top layer made up of fused quartz; (c) the manipulation of our absorber based on using fused quartz, PTFE, PP, and PET as the top layer, where the thicknesses of these materials are 32, 40, 32, and 24 μm, respectively, and the other parameters are the same as in (a); (d) multichannel absorption when the top layer is chosen as PTFE.
    Fig. 7. (a) Absorption as a function of frequency when the top layer is chosen as fused quartz, da=51.75  μm, ds=db=38.34  μm, and the other parameters are the same as in Fig. 2; (b) the manipulation of our absorber based on changing the thickness of the top layer made up of fused quartz; (c) the manipulation of our absorber based on using fused quartz, PTFE, PP, and PET as the top layer, where the thicknesses of these materials are 32, 40, 32, and 24 μm, respectively, and the other parameters are the same as in (a); (d) multichannel absorption when the top layer is chosen as PTFE.
    Xi Wang, Xing Jiang, Qi You, Jun Guo, Xiaoyu Dai, Yuanjiang Xiang. Tunable and multichannel terahertz perfect absorber due to Tamm surface plasmons with graphene[J]. Photonics Research, 2017, 5(6): 000536
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