Researching | 1.3 W Single-Frequency Tapered Semiconductor Laser Amplification System with Wide Tuning Range

Journals >Laser & Optoelectronics Progress >Volume 55 >Issue 12 >Page 121401 > Article

Laser & Optoelectronics Progress
Vol. 55, Issue 12, 121401 (2018)

1.3 W Single-Frequency Tapered Semiconductor Laser Amplification System with Wide Tuning Range

Qian Li^1、2, Min Wan¹, Yanhua Lu^1、*, Xiafei Xu¹, Huaijin Ren¹, and Hao Tan¹

Author Affiliations

¹ Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China

² Graduate School of China Academy of Engineering Physics, Beijing 100088, China

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DOI: 10.3788/LOP55.121401 Cite this Article Set citation alerts

Qian Li, Min Wan, Yanhua Lu, Xiafei Xu, Huaijin Ren, Hao Tan. 1.3 W Single-Frequency Tapered Semiconductor Laser Amplification System with Wide Tuning Range[J]. Laser & Optoelectronics Progress, 2018, 55(12): 121401 Copy Citation Text

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References

[1] Hall R N, Fenner G E, Kingsley J D et al. Coherent light emission from GaAs junctions[J]. Physical Review Letters, 9, 366-368(1962). http://prola.aps.org/abstract/PRL/v9/i9/p366_1

[2] Nguyen H K, Hu M H, Nishiyama N et al. 107-mW low-noise green-light emission by frequency doubling of a reliable 1060-nm DFB semiconductor laser diode[J]. IEEE Photonics Technology Letters, 18, 682-684(2006). http://ieeexplore.ieee.org/document/1597295/

[3] Adamiec P, Sumpf B, Feise D et al. Twin-contact 645-nm tapered laser with 500-mW output power[J]. IEEE Photonics Technology Letters, 21, 236-238(2009). http://ieeexplore.ieee.org/document/4738356/

[4] Michel N, Odriozola H, Kwok C H et al. High modulation efficiency and high power 1060 nm tapered lasers with separate contacts[J]. Electronics Letters, 45, 103-104(2009). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4752644

[5] Mehuys D, Welch D F, Goldberg L. 2.0 W CW, diffraction-limited tapered amplifier with diode injection[J]. Electronics Letters, 28, 1944-1946(1992). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=170850

[6] Ferrari G, Mewes M O, Schreck F et al. High-power multiple-frequency narrow-linewidth laser source based on a semiconductor tapered amplifier[J]. Optics Letters, 24, 151-153(1999). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=834363

[7] Xiong Y H, Murphy S, Carlsten J L et al. Design and characteristics of a tapered amplifier diode system by seeding with continuous-wave and mode-locked external cavity diode laser[J]. Optical Engineering, 45, 124205(2006). http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=OPEGAR000045000012124205000001&idtype=cvips&gifs=Yes

[8] Maiwald M, Schwertfeger S, Güther R et al. 600 mW optical output power at 488 nm by use of a high-power hybrid laser diode system and a periodically poled MgO: LiNbO3 bulk crystal[J]. Optics Letters, 31, 802-804(2006). http://www.opticsinfobase.org/ol/abstract.cfm?id=88428

[9] Liu Y H, Han Y X, Zhang C H et al. Semiconductor tapered-amplified laser (TPA) set for Rb cooling system[J]. Acta Sinica Quantum Optica, 15, 91-94(2009).

[10] Chen L, Zhong B, Xia Y et al. Design and characteristics of diode laser amplifier system at 1015 nm[J]. Laser & Optoelectronics Progress, 52, 111407(2015).

[11] Peng Y, Shi Q P, Huo H et al. Realization of narrow linewidth property based on ultra-stable cavity in precision optics teaching[J]. Laser & Optoelectronics Progress, 54, 081402(2017).

[12] Fang Z J, Cai H W, Chen G T et al[M]. Technology and application of single frequency semiconductor laser, 10-21(2015).

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Qian Li, Min Wan, Yanhua Lu, Xiafei Xu, Huaijin Ren, Hao Tan. 1.3 W Single-Frequency Tapered Semiconductor Laser Amplification System with Wide Tuning Range[J]. Laser & Optoelectronics Progress, 2018, 55(12): 121401

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