• Laser & Optoelectronics Progress
  • Vol. 55, Issue 12, 121401 (2018)
Qian Li1、2, Min Wan1, Yanhua Lu1、*, Xiafei Xu1, Huaijin Ren1, and Hao Tan1
Author Affiliations
  • 1 Institute of Applied Electronics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China
  • 2 Graduate School of China Academy of Engineering Physics, Beijing 100088, China
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    DOI: 10.3788/LOP55.121401 Cite this Article Set citation alerts
    Qian Li, Min Wan, Yanhua Lu, Xiafei Xu, Huaijin Ren, Hao Tan. 1.3 W Single-Frequency Tapered Semiconductor Laser Amplification System with Wide Tuning Range[J]. Laser & Optoelectronics Progress, 2018, 55(12): 121401 Copy Citation Text show less

    Abstract

    The single-frequency tunable tapered semiconductor laser amplification system with maximum output power of 1.3 W and wavelength of 910-930 nm is reported, and variations in the output power of tapered semiconductor amplifier with the injection current and seeding power are experimentally investigated. Through the isolator and focusing lens, the 13.6 mW single-frequency seeding light at 920 nm decreases to a power of 12.4 mW. The output power of the amplifier with injection current of 4 A can reach 1300 mW, the gain is up to 20.21 dB, and the linewidth is 660 fm. Moreover, when the seeding power increases from 0 to 13.6 mW, the amplification power increases accordingly. The laser obtained by this system can be used to study the narrow linewidth continuously tunable medium (deep) ultraviolet laser after quadrupling.
    Qian Li, Min Wan, Yanhua Lu, Xiafei Xu, Huaijin Ren, Hao Tan. 1.3 W Single-Frequency Tapered Semiconductor Laser Amplification System with Wide Tuning Range[J]. Laser & Optoelectronics Progress, 2018, 55(12): 121401
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