Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

Peng Cao; Tiancai Wang; Hongling Peng; Zhanguo Li; Qiandong Zhuang; Wanhua Zheng

doi:10.3788/COL202422.012502

Journals >Chinese Optics Letters >Volume 22 >Issue 1 >Page 012502 > Article

Chinese Optics Letters
Vol. 22, Issue 1, 012502 (2024)

Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

Peng Cao^1、2, Tiancai Wang^1、3, Hongling Peng^1、4, Zhanguo Li⁵, Qiandong Zhuang⁶, and Wanhua Zheng^{1、2、3、4、*}

Author Affiliations

¹Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³College of Electronic and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

⁴State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁵School of Physics, Changchun Normal University, Changchun 130022, China

⁶Physics Department, Lancaster University, Lancaster LA1 4YB, UK

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DOI: 10.3788/COL202422.012502 Cite this Article Set citation alerts

Peng Cao, Tiancai Wang, Hongling Peng, Zhanguo Li, Qiandong Zhuang, Wanhua Zheng. Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber[J]. Chinese Optics Letters, 2024, 22(1): 012502 Copy Citation Text

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Fig. 1. HRXRD curve of InAs/InAsSb superlattice grown on GaSb substrate.

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(a) Band diagram of InAs/InAsSb superlattice; (b) schematic of fabricated InAs/InAsSb nBn device; (c) SEM image of passivated mesa sidewall of the device; (d) microscope image of the InAs/InAsSb nBn device.

Fig. 2. (a) Band diagram of InAs/InAsSb superlattice; (b) schematic of fabricated InAs/InAsSb nBn device; (c) SEM image of passivated mesa sidewall of the device; (d) microscope image of the InAs/InAsSb nBn device.

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Fig. 3. Temperature dependent (a) dark current and (b) RA characteristic of 200 µm diameter InAs/InAsSb nBn device. The inset of (a) is the dark current density as a function of perimeter-to-area ratio (P/A). (c) Arrhenius plot of 200 µm diameter InAs/InAsSb nBn device under reverse bias of −600 mV.

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Fig. 4. Photoresponse varying with reverse bias voltage at 237 K.

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Fig. 5. Detectivity of nBn InAs/InAsSb device at 97 and 237 K.

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Ref.	D_pixel (µm)	Dark Current Density at High Temperature (A/cm²)
[15]	100–400	0.44 (−50 mV, 300 K)
[17]	500	0.50 (−130 mV, 300 K)
[24]	50	0.865 (−100 mV, 300 K)
[25]	N/A	0.39 (−120 mV, 300 K)
[26]	20	3.94 (−1 V, 300 K)
This work	200	0.31 (−600 mV, 297 K)