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Journals >Chinese Optics Letters >Volume 22 >Issue 1 >Page 012502 > Article

Chinese Optics Letters
Vol. 22, Issue 1, 012502 (2024)

Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber

Peng Cao^1、2, Tiancai Wang^1、3, Hongling Peng^1、4, Zhanguo Li⁵, Qiandong Zhuang⁶, and Wanhua Zheng^{1、2、3、4、*}

Author Affiliations

¹Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³College of Electronic and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

⁴State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

⁵School of Physics, Changchun Normal University, Changchun 130022, China

⁶Physics Department, Lancaster University, Lancaster LA1 4YB, UK

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DOI: 10.3788/COL202422.012502 Cite this Article Set citation alerts

Peng Cao, Tiancai Wang, Hongling Peng, Zhanguo Li, Qiandong Zhuang, Wanhua Zheng. Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber[J]. Chinese Optics Letters, 2024, 22(1): 012502 Copy Citation Text

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References

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Peng Cao, Tiancai Wang, Hongling Peng, Zhanguo Li, Qiandong Zhuang, Wanhua Zheng. Mid-wavelength nBn photodetector with high operating temperature and low dark current based on InAs/InAsSb superlattice absorber[J]. Chinese Optics Letters, 2024, 22(1): 012502

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