• Laser & Optoelectronics Progress
  • Vol. 59, Issue 17, 1716006 (2022)
Taiqi Yan, Bingqing Chen*, Jiayu Liang, Bingbing Sun, and Shaoqing Guo
Author Affiliations
  • D Printing Research and Engineering Technology Center, AECC Beijing Institute of Aeronautical Materials, Beijing 100095, China
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    DOI: 10.3788/LOP202259.1716006 Cite this Article Set citation alerts
    Taiqi Yan, Bingqing Chen, Jiayu Liang, Bingbing Sun, Shaoqing Guo. Quality Optimization of TC4 Alloy Fabrication via Selective Laser Melting[J]. Laser & Optoelectronics Progress, 2022, 59(17): 1716006 Copy Citation Text show less
    Morphology of TC4 alloy powder. (a) ×100; (b) ×500
    Fig. 1. Morphology of TC4 alloy powder. (a) ×100; (b) ×500
    Renishaw RenAM 500M selective laser melting equipment
    Fig. 2. Renishaw RenAM 500M selective laser melting equipment
    Diagram of laser scanning strategy
    Fig. 3. Diagram of laser scanning strategy
    Metallography and relative densities of SLM TC4 alloy under 30 μm layer thickness. (a) Hatch spacing is 0.065 mm; (b) hatch spacing is 0.085 mm
    Fig. 4. Metallography and relative densities of SLM TC4 alloy under 30 μm layer thickness. (a) Hatch spacing is 0.065 mm; (b) hatch spacing is 0.085 mm
    Metallography and relative densities of SLM TC4 alloy under 40 μm layer thickness. (a) Hatch spacing is 0.065 mm; (b) hatch spacing is 0.085 mm
    Fig. 5. Metallography and relative densities of SLM TC4 alloy under 40 μm layer thickness. (a) Hatch spacing is 0.065 mm; (b) hatch spacing is 0.085 mm
    Microstructure of SLM TC4 alloy. (a) X/Y direction; (b) Z direction
    Fig. 6. Microstructure of SLM TC4 alloy. (a) X/Y direction; (b) Z direction
    Metallographic photos of samples with different heat treatment parameters. (a) 650 ℃/2 h, X/Y direction; (b) 650 ℃/2 h, Z direction; (c) 750 ℃/2 h, X/Y direction; (d) 750 ℃/2 h, Z direction; (e) 850 ℃/2 h, X/Y direction; (f) 850 ℃/2 h, Z direction; (g) 950 ℃/2 h, X/Y direction; (h) 950 ℃/2 h, Z direction
    Fig. 7. Metallographic photos of samples with different heat treatment parameters. (a) 650 ℃/2 h, X/Y direction; (b) 650 ℃/2 h, Z direction; (c) 750 ℃/2 h, X/Y direction; (d) 750 ℃/2 h, Z direction; (e) 850 ℃/2 h, X/Y direction; (f) 850 ℃/2 h, Z direction; (g) 950 ℃/2 h, X/Y direction; (h) 950 ℃/2 h, Z direction
    Tensile properties of TC4 alloy under different heat treatment parameters. (a) X/Y direction; (b) Z direction
    Fig. 8. Tensile properties of TC4 alloy under different heat treatment parameters. (a) X/Y direction; (b) Z direction
    Macroscopic tensile fracture morphology of samples. (a) X/Y direction; (b) Z direction
    Fig. 9. Macroscopic tensile fracture morphology of samples. (a) X/Y direction; (b) Z direction
    Microscopic tensile fracture morphology of samples. (a) X/Y direction; (b) Z direction
    Fig. 10. Microscopic tensile fracture morphology of samples. (a) X/Y direction; (b) Z direction
    ElementTiAlVOHN
    Mass fraction /%balance6.024.020.0690.00420.0038
    ElementFeCSnCuMnMo
    Mass fraction /%0.0620.0035<0.005<0.005<0.005<0.005
    Table 1. Chemical composition of TC4 alloy powder
    Parameter typesLayer thickness /μmLaser power /WScanning speed /(mm·s-1Hatch spacing /mm
    Value

    30

    40

    200

    240

    280

    1500

    1875

    0.065

    0.085

    Table 2. Process parameters of selective laser melting
    No.Temperature /℃Time /h
    16502
    27502
    38502
    49502
    5Untreated
    Table 3. Heat treatment parameters of SLM TC4 alloy
    No.Laser power /WScanning speed /(mm·s-1Hatch spacing /mmRelative density /%No.Laser power /WScanning speed /(mm·s-1Hatch spacing /mmRelative density /%
    120018750.06599.973720018750.08599.970
    220015000.06599.987820015000.08599.991
    324018750.06599.990924018750.08599.981
    424015000.06599.9351024015000.08599.982
    528018750.06599.9611128018750.08599.990
    628015000.06599.9201228015000.08599.969
    Table 4. Process parameters and corresponding relative densities of SLM TC4 alloy under 30 μm layer thickness
    No.Laser power /WScanning speed /(mm·s-1Hatch spacing /mmRelative density /%No.Laser power /WScanning speed /(mm·s-1Hatch spacing /mmRelative density /%
    120018750.06599.992720018750.08599.985
    220015000.06599.993820015000.08599.980
    324018750.06599.990924018750.08599.980
    424015000.06599.9881024015000.08599.979
    528018750.06599.9791128018750.08599.991
    628015000.06599.9701228015000.08599.983
    Table 5. Process parameters and corresponding relative densities of SLM TC4 alloy under 40 μm layer thickness
    Heat treatment parameterX/Y directionZ direction
    σb /MPaσp0.2 /MPaδ5 /%σb /MPaσp0.2 /MPaδ5 /%
    SLM114910648.1111110035.1
    650 ℃/2 h10319609.510049047.6
    750 ℃/2 h99992610.797887211.2
    850 ℃/2 h98290115.595884512.6
    950 ℃/2 h90681916.589475512.9
    Ref.[16≥895≥825≥10≥895≥825≥10
    Table 6. Tensile properties of TC4 alloy under different heat treatment parameters
    Taiqi Yan, Bingqing Chen, Jiayu Liang, Bingbing Sun, Shaoqing Guo. Quality Optimization of TC4 Alloy Fabrication via Selective Laser Melting[J]. Laser & Optoelectronics Progress, 2022, 59(17): 1716006
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