1. Schematic diagram of the IGZO-based neuromorphic transistor with different gate dielectrics

2. Leakage current curves and corresponding AFM images (inset) of monolayer gate dielectric and bilayer gate dielectric

3. Transfer characteristics and output characteristics of two kinds of dielectric devices

4. (a) Top micrograph, (b) transfer characteristics with different V_G2 (from-2.0 V to 1.0 V) and (c) the V_th with different V_G2 of transistor

5. (a) Schematic diagram of biological synapse and their equivalent electrical circuit of the neuromorphic transistor, (b) EPSC responses under an electric pulse of 0.5 V, and (c) EPSC induced by electric pulses of different amplitudes for IGZO-based dual-gate transistor with stacked Al₂O₃/chitosan gate dielectrics

6. (a) Multi-pulse facilitation induced by eight successive electric pulse (0.5 V, 25 ms) and (b) ratio of A₈/A₁ plotted as a function of the time interval between the pulses for IGZO-based dual-gate transistor with stacked Al₂O₃/chitosan gate dielectrics

Table 1. Transistor parameters of IGZO-based transistors

Table 2. Energy consumption of the single EPSC peak in different artificial synaptic transistors