Incorporation of Ag into Cu(In,Ga)Se2 films in low-temperature process

Zhaojing Hu; Yunxiang Zhang; Shuping Lin; Shiqing Cheng; Zhichao He; Chaojie Wang; Zhiqiang Zhou; Fangfang Liu; Yun Sun; Wei Liu

doi:10.3788/COL202119.114001

Journals >Chinese Optics Letters >Volume 19 >Issue 11 >Page 114001 > Article

Chinese Optics Letters
Vol. 19, Issue 11, 114001 (2021)

Incorporation of Ag into Cu(In,Ga)Se₂ films in low-temperature process

Zhaojing Hu, Yunxiang Zhang, Shuping Lin, Shiqing Cheng..., Zhichao He, Chaojie Wang, Zhiqiang Zhou, Fangfang Liu, Yun Sun and Wei Liu^*|Show fewer author(s)

Author Affiliations

Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin 300350, China

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DOI: 10.3788/COL202119.114001 Cite this Article Set citation alerts

Zhaojing Hu, Yunxiang Zhang, Shuping Lin, Shiqing Cheng, Zhichao He, Chaojie Wang, Zhiqiang Zhou, Fangfang Liu, Yun Sun, Wei Liu, "Incorporation of Ag into Cu(In,Ga)Se₂ films in low-temperature process," Chin. Opt. Lett. 19, 114001 (2021) Copy Citation Text

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Abstract

Chalcopyrite

Cu (In, Ga) {Se}_{2}

(CIGS) thin films deposited in a low-temperature process (450°C) usually produce fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting temperature and enlarge band gap of the CIGS films, were employed to enhance the quality of thin films in a low-temperature deposition process. It is demonstrated that both the Ag precursor and Ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency. The former is more obvious than the latter. Furthermore, the Urbach energy is also reduced with Ag doping. This work aims to provide a feasible Ag-doping process for the high-quality CIGS films in a low-temperature process.