Ultra-power-efficient heterogeneous III–V/Si MOSCAP (de-)interleavers for DWDM optical links

Stanley Cheung; Geza Kurczveil; Yingtao Hu; Mingye Fu; Yuan Yuan; Di Liang; Raymond G. Beausoleil

doi:10.1364/PRJ.444991

Journals >Photonics Research >Volume 10 >Issue 2 >Page A22 > Article

Photonics Research
Vol. 10, Issue 2, A22 (2022)

Ultra-power-efficient heterogeneous III–V/Si MOSCAP (de-)interleavers for DWDM optical links

Stanley Cheung^*, Geza Kurczveil, Yingtao Hu, Mingye Fu, Yuan Yuan, Di Liang, and Raymond G. Beausoleil

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Hewlett Packard Labs, Hewlett Packard Enterprise, Milpitas, California 95035, USA

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DOI: 10.1364/PRJ.444991 Cite this Article Set citation alerts

Stanley Cheung, Geza Kurczveil, Yingtao Hu, Mingye Fu, Yuan Yuan, Di Liang, Raymond G. Beausoleil. Ultra-power-efficient heterogeneous III–V/Si MOSCAP (de-)interleavers for DWDM optical links[J]. Photonics Research, 2022, 10(2): A22 Copy Citation Text

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(a) Schematic of envisioned DWDM architecture with integrated OFC, MOSCAP (de-)interleaver, MRRs, and photodetectors; (b) (de-)interleaver after comb-source [6].

Fig. 1. (a) Schematic of envisioned DWDM architecture with integrated OFC, MOSCAP (de-)interleaver, MRRs, and photodetectors; (b) (de-)interleaver after comb-source [6].

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Finite difference eigen-mode (FDE) calculations for (a) effective index (neff), (b) group index (ng), (c) effective index change versus width (dneff/dw), (d) effective index change versus thickness (dneff/dt), (e) wavelength shift versus width (Δλ0/dw), (f) wavelength shift versus thickness (Δλ0/dt).

Fig. 2. Finite difference eigen-mode (FDE) calculations for (a) effective index (neff), (b) group index (ng), (c) effective index change versus width (dneff/dw), (d) effective index change versus thickness (dneff/dt), (e) wavelength shift versus width (Δλ0/dw), (f) wavelength shift versus thickness (Δλ0/dt).

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Fig. 3. (a) 3D schematic of the heterogeneous III–V/Si MOSCAP tuner, (b) simulated TE optical mode for a HfO2 dielectric interface, and (c) TEM image of a GaAs/dielectric/Si interface as an example.

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$Simulated refractive index change and FCA losses for (a) n−GaAs/Al2O3/p−Si, and (b) n−GaAs/HfO2/p−Si for gap thicknesses of 5, 10, 15, 20, and 25 nm. Layer doping: n-GaAs (3×1018 cm−2), n−Al0.20Ga0.80As (3×1018 cm−2), Si (5×1016 cm−2).$

Fig. 4. Simulated refractive index change and FCA losses for (a) n−GaAs/Al2O3/p−Si, and (b) n−GaAs/HfO2/p−Si for gap thicknesses of 5, 10, 15, 20, and 25 nm. Layer doping: n-GaAs (3×1018 cm−2), n−Al0.20Ga0.80As (3×1018 cm−2), Si (5×1016 cm−2).

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Fig. 5. 65 GHz (de-)interleaver transmission response with and without MOSCAP phase tuning for (a) second-order AMZI and (b) third-order AMZI.

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Fig. 6. 65 GHz (de-)interleaver transmission response with and without MOSCAP phase tuning for (a) one-ring RAMZI, (b) two-ring RAMZI, (c) three-ring RAMZI, and (d) two-channel coupled two-ring resonator.

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Fig. 7. Microscope images of various (de-)interleavers: (a) second-order AMZI; (b) third-order AMZI; (c)–(e) one-, two-, three-ring-assisted AMZIs; and (f) second-order cascaded rings.

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Fig. 8. (a) Microscope image of angled III–V/Si test structures and cutback loss measurements for evaluating III–V/Si transition losses, (b) image of MOSCAP MZI structure for evaluating phase tuning efficiency and optical response as a function of bias voltage.

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Fig. 9. Measured response of second-order MOSCAP AMZI (de-)interleaver with (a) un-corrected phase and (b) corrected phase with Vdelay1=−1 V.

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Fig. 10. Measured response of third-order MOSCAP AMZI (de-)interleaver with (a) un-corrected phase and (b) corrected phase with Vdelay1=0.3 V, Vdelay2=1 V, Vdelay3=0.1 V.

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Fig. 11. Measured response of one-ring-assisted MOSCAP AMZI (de-)interleaver with (a) un-corrected phase and (b) corrected phase at Vring1=0 V, Vdelay=−2 V. Measured response of two-ring-assisted MOSCAP AMZI (de-)interleaver with (c) un-corrected phase and (d) corrected phase at Vring1=0 V, Vring2=0 V, Vdelay=−2 V. Measured response of three-ring-assisted MOSCAP AMZI (de-)interleaver with (e) un-corrected phase and (f) corrected phase at Vring1=0 V, Vring2=0 V, Vring2=0 V, Vdelay=−3 V.

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Authors	Device Type	Material	Wave. (μm)	Sep. (GHz)	XT (dB)	IL (dB)	Tuning Pow. (mW)
Q. Deng	2nd-order AMZI	Si	1.55	1838	−15	0.4	0
A. Rizzo [16]	1-ring RAMZI	Si	1.55	400	−15	$< 1$	N/A
S. Lai [41]	SCOW	Si	1.55	100	−20	8	0
J. F. Song [19]	1-ring RAMZI	Si	1.55	178	−22	8	25.5
N. Zhou [18]	MZI-SLM	Si	1.55	56	N/A	$< 1$	23
J. F. Song [42]	1-ring RAMZI	Si	1.55	1250	−7 to −10	10	0
J. F. Song [43]	1-ring RAMZI	Si	1.55	250	$< - 10$	8	0
L. W. Luo [14]	3-ring RAMZI	Si	1.55	120	−20	8	5
M. Cherchi [44]	2nd-order AMZI	Si	1.55	1875	−22	3	0
M. Cherchi [45]	1-ring RAMZI	Si	1.55	125	−9 to −18	3	0
X. Jiang [46]	MZI-SLM	Si	1.55	123	−20	$< 1$	N/A
This work	2nd-order AMZI	$III − V / {Al}_{2} O_{3} / Si$	1.31	65	−22 to −15	2	0.000083
This work	3rd-order AMZI	$III − V / {Al}_{2} O_{3} / Si$	1.31	65	−32 to −22	1.4	0.000053
This work	1-ring RAMZI	$III − V / {Al}_{2} O_{3} / Si$	1.31	65	−27 to −16	1.8	0.000010
This work	2-ring RAMZI	$III − V / {Al}_{2} O_{3} / Si$	1.31	65	−22 to −21	2.0	0.00722
This work	3-ring RAMZI	$III − V / {Al}_{2} O_{3} / Si$	1.31	65	−20 to −18	4.4	0.000034

Table 1. Complete Survey of State-of-the-Art DWDM Si (De-)interleavers

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Design	$Δ L$ (μm)	$c_{1}$	$c_{2}$	$c_{3}$	$c_{4}$
2nd-order AMZI	610.5	0.50	0.29	0.08	–
3rd-order AMZI	610.5	0.50	0.19	0.19	0.025

Table 2. Design Summary of III–V/Si MOSCAP Nth-Order AMZI (De-)interleavers

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Design	$L_{ring}$ (μm)	$κ_{r}^{1}$	$κ_{r}^{2}$	$κ_{r}^{3}$	$c_{0}$	$c_{1}$
1-ring RAMZI	1200	0.89	–	–	0.50	0.50
2-ring RAMZI	1200	0.97	0.62	–	0.50	0.50
3-ring RAMZI	1200	0.96	0.68	0.25	0.50	0.50

Table 3. Design Summary of III–V/Si MOSCAP One-, Two-, Three-ring RAMZI (De-)interleavers

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Design Name	Si Doping ( ${cm}^{- 3}$ )	Gate Type
Design 1	4 × 10¹⁶	${Al}_{2} O_{3}$ (6 nm)
Design 2	5 × 10¹⁷	${HfO}_{2} / {Al}_{2} O_{3}$ (10/3 nm)
Design 3	u.i.d.	${HfO}_{2} / {Al}_{2} O_{3}$ (5.4/3 nm)