Hongyu Lin, Hao Xie, Yang Wang, Hongbo Lu, Yan Sun, Shuhong Hu, Xin Chen, Ning Dai. Modeling of InAsSbP Blocking Barrier Grown by Liquid-Phase Epitaxy in InAs-Based Infrared Photodetector[J]. Acta Optica Sinica, 2019, 39(5): 0504002
- Acta Optica Sinica
- Vol. 39, Issue 5, 0504002 (2019)
Fig. 1. Structure of InAs-based infrared detector
Fig. 2. Simulated energy band diagrams of different device structures with InAsSbP blocking barrier. (a) nBip structure; (b) pBin structure; (c) nBn structure
Fig. 3. Normalized on-off ratio versus bandgap of blocking barrier for pBin detector
Fig. 4. Normalized on-off ratio versus thickness of blocking barrier for different device structures. (a) nBip structure; (b) pBin structure
Fig. 5. Normalized on-off ratio versus doping concentration of blocking barrier for different device structures. (a) nBip structure; (b) pBin structure
Fig. 6. Simulated energy band diagrams of nBip detector with doping concentration deviating from optimum value. (a) Lower than optimum value; (b) higher than optimum value
Fig. 7. Simulated energy band diagrams of pBin detector with doping concentration deviating from optimum value. (a) Lower than optimum value; (b) higher than optimum value
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Table 1. Basic materials and structural parameters of InAs-based detector
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