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    Journals >Acta Optica Sinica >Volume 39 >Issue 5 >Page 0504002 > Article
    • Acta Optica Sinica
    • Vol. 39, Issue 5, 0504002 (2019)
    Modeling of InAsSbP Blocking Barrier Grown by Liquid-Phase Epitaxy in InAs-Based Infrared Photodetector
    Hongyu Lin1、2, Hao Xie1、2, Yang Wang1、2, Hongbo Lu1、2, Yan Sun1, Shuhong Hu1、*, Xin Chen1, and Ning Dai1、*
    Author Affiliations
  • 1 State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 2 University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/AOS201939.0504002 Cite this Article Set citation alerts
    Hongyu Lin, Hao Xie, Yang Wang, Hongbo Lu, Yan Sun, Shuhong Hu, Xin Chen, Ning Dai. Modeling of InAsSbP Blocking Barrier Grown by Liquid-Phase Epitaxy in InAs-Based Infrared Photodetector[J]. Acta Optica Sinica, 2019, 39(5): 0504002 Copy Citation Text show less
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    Article index updated: May. 18, 2024
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    Hongyu Lin, Hao Xie, Yang Wang, Hongbo Lu, Yan Sun, Shuhong Hu, Xin Chen, Ning Dai. Modeling of InAsSbP Blocking Barrier Grown by Liquid-Phase Epitaxy in InAs-Based Infrared Photodetector[J]. Acta Optica Sinica, 2019, 39(5): 0504002
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