• Chinese Optics Letters
  • Vol. 14, Issue 8, 083401 (2016)
Jiaoling Zhao1、2, Hongbo He1、*, Hu Wang1、2, Kui Yi1, Bin Wang1、2, and Yun Cui1
Author Affiliations
  • 1Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China
  • 2University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/COL201614.083401 Cite this Article Set citation alerts
    Jiaoling Zhao, Hongbo He, Hu Wang, Kui Yi, Bin Wang, Yun Cui. Interface characterization of Mo/Si multilayers[J]. Chinese Optics Letters, 2016, 14(8): 083401 Copy Citation Text show less
    Measured and fitted curve of GIXRR results.
    Fig. 1. Measured and fitted curve of GIXRR results.
    (a) Regional XPS scan of the top Si layer for various etching times; (b) in-depth concentrate on the profile of the Mo/Si multilayer.
    Fig. 2. (a) Regional XPS scan of the top Si layer for various etching times; (b) in-depth concentrate on the profile of the Mo/Si multilayer.
    Regional XPS scan of (a) Si 2p and (b) Mo 3d at the Si-on-Mo interface; (c) Si 2p and (d) Mo 3d at the Mo-on-Si interface.
    Fig. 3. Regional XPS scan of (a) Si 2p and (b) Mo 3d at the Si-on-Mo interface; (c) Si 2p and (d) Mo 3d at the Mo-on-Si interface.
    (a) HRTEM image for the cross-sectional structure of the Mo/Si multilayer; (b) the cross–sectional profile curve; (c) the Mo layer thickness.
    Fig. 4. (a) HRTEM image for the cross-sectional structure of the Mo/Si multilayer; (b) the cross–sectional profile curve; (c) the Mo layer thickness.
    (a) Two-layer and four-layer models; (b) the calculated reflectivity of the Mo/Si multilayers with MoSi2 interlayer compounds using the four-layer model.
    Fig. 5. (a) Two-layer and four-layer models; (b) the calculated reflectivity of the Mo/Si multilayers with MoSi2 interlayer compounds using the four-layer model.
    ItemSi 2pMo3d5/2Mo3d3/2
    ChargeSi2Si+2xMo4+Mo4+
    CompositionMoSi2SiOxMoSi2MoSi2
    B. E. S. (eV)99.4102.5228.1231.3
    B. E. M. (eV)99.4101.3228.1231.3
    Table 1. XPS Photoelectron Curve Fitting Results
    InterlayerdModSid1d2σMoσSiσ1σ2
    MoSi224.1040.613.152.620.110.61.090.25
    Mo5Si323.0940.173.753.690.880.560.71.01
    Mo3Si22.5240.283.184.681.121.010.220.51
    Table 2. EUV Reflective Calculated Results(Units: Å)
    Jiaoling Zhao, Hongbo He, Hu Wang, Kui Yi, Bin Wang, Yun Cui. Interface characterization of Mo/Si multilayers[J]. Chinese Optics Letters, 2016, 14(8): 083401
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