[1] R M Stevenson, A J Hudson, A J Bennett et al. Evolution of entanglement between distinguishable light states. Phys Rev Lett, 101, 170501(2008).
[2] W B Gao, P Fallahi, E Togan et al. Observation of entanglement between a quantum dot spin and a single photon. Nature, 491, 426(2012).
[3] P Lodahl, S Mahmoodian, S Stobbe. Interfacing single photons and single quantum dots with photonic nanostructures. Rev Mod Phys, 87, 347(2015).
[4] I Aharonovich, D Englund, M Toth. Solid-state single-photon emitters. Nat Photonics, 10, 631(2016).
[5] A Delteil, Z Sun, W B Gao et al. Generation of heralded entanglement between distant hole spins. Nat Phys, 12, 218(2016).
[6] P Senellart, G Solomon, A White. High-performance semiconductor quantum-dot single-photon sources. Nat Nanotechnol, 12, 1026(2017).
[7] H Wang, H Hu, T H Chung et al. On-demand semiconductor source of entangled photons which simultaneously has high fidelity, efficiency, and indistinguishability. Phys Rev Lett, 122, 113602(2019).
[8] J D Plumhof, R Trotta, A Rastelli et al. Experimental methods of post-growth tuning of the excitonic fine structure splitting in semiconductor quantum dots. Nanoscale Res Lett, 7, 336(2012).
[9] A J Bennett, M A Pooley, R M Stevenson et al. Electric-field-induced coherent coupling of the exciton states in a single quantum dot. Nat Phys, 6, 947(2010).
[10] M Ghali, K Ohtani, Y Ohno et al. Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field. Nat Commun, 3, 661(2012).
[11] R Trotta, E Zallo, C Ortix et al. Universal recovery of the energy-level degeneracy of bright excitons in InGaAs quantum dots without a structure symmetry. Phys Rev Lett, 109, 147401(2012).
[12] X F Wu, H Wei, X M Dou et al. In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots. Europhys Lett, 107, 27008(2014).
[13] J Wang, M Gong, G C Guo et al. Eliminating the fine structure splitting of excitons in self-assembled InAs/GaAs quantum dots via combined stresses. Appl Phys Lett, 101, 2513(2012).
[14] X Dou, B Sun, B Wang et al. Photoluminescence energy and fine structure splitting in single quantum dots by uniaxial stress. Chin Phys Lett, 25, 1120(2008).
[15] R Keil, M Zopf, Y Chen et al. Solid-state ensemble of highly entangled photon sources at rubidium atomic transitions. Nat Commun, 8, 15501(2017).
[16] J Zhang, J S Wildmann, F Ding et al. High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots. Nat Commun, 6, 10067(2015).
[17] F Ding, R Singh, J D Plumhof et al. Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress. Phys Rev Lett, 104, 067405(2010).
[18] S B Desai, G Seol, J S Kang et al. Strain-induced indirect to direct bandgap transition in multi layer WSe2. Nano Lett, 14, 4592(2014).
[19] H J Conley, B Wang, J I Ziegler et al. Bandgap engineering of strained monolayer and bilayer MoS2. Nano Lett, 13, 3626(2013).
[20] M Cardona. Piezo-electroreflectance in Ge, GaAs, and Si. Phys Rev, 172, 816(1968).
[21] S Seidl, M Kroner et al. Effect of uniaxial stress on excitons in a self-assembled quantum dot. Appl Phys Lett, 88, 2513(2006).
[22] M Gong, W Zhang, G C Guo et al. exciton polarization, fine-structure splitting, and the asymmetry of quantum dots under uniaxial stress. Phys Rev Lett, 106, 227401(2011).
[23] W Xiong, X Xu, J W Luo et al. fundamental intrinsic lifetimes in semiconductor self-assembled quantum dots. Phys Rev Appl, 10, 044009(2018).
[24] F Troiani, C Tejedor. Entangled photon pairs from a quantum-dot cascade decay: The effect of time reordering. Phys Rev B, 78, 155305(2008).
