• Journal of Infrared and Millimeter Waves
  • Vol. 23, Issue 2, 103 (2004)
[in Chinese]1、2, [in Chinese]2, [in Chinese]2, [in Chinese]1、2, [in Chinese]1、2, [in Chinese]2, [in Chinese]2, and [in Chinese]2
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY ON GROWTH AND OPTICAL PROPERTIES OF ZnO THIN FILMS ON Si( 111 ) SUBSTRATE BY PLASMA ASSISTED MOLECULAR BEAM EPITAXY(P-MBE)[J]. Journal of Infrared and Millimeter Waves, 2004, 23(2): 103 Copy Citation Text show less
    References

    [1] Lin B X, Fu Z X, Jia Y B. Green luminescent center in undoped zinc oxide films deposited on silicon substrates [J].Appl. Phys. Lett., 2001, 79(7): 943-945

    [2] Haga K, Katahira F, Watanable H. Preparation of ZnO films by atmospheric pressure chemical-vapor deposition using zinc acetylacetonate and ozone [J]. Thin Solid Films,1999, 343-344:145-147

    [3] Hachigo A, Nakahata H, Higaki K, et al. Heteroepitaxial growth of ZnO films on diamond ( 111 ) plane by magnetron sputtering[J]. Appl. Phys. Lett., 1994, 65(20): 2556-2558

    [4] Tang Z K, Wang G K L, Yu P, et al. Room temperature ultraviolet laser emission from self assembled ZnO microcrystallite thin films [J]. Appl. Phys. Lett. , 1998, 72 ( 25 ):3270-3272

    [5] Huang M H, Mao S, Feick H, et al. Room-Temperature Ultraviolet Nanowire Nanolasers [ J ]. Science, 2001, 292:1897-1899

    [6] Makino T, Chia C H, Tuan N T, et al. Exciton spectra of ZnO epitaxial layers on lattice-matched substrates grown with laser-molecular-beam epitaxy [ J ]. Appl. Phys. Lett. , 2000,76(24): 3549-3551

    [7] Kern W, Puotinen D A. Cleaning solutions based on hydrogen peroxide for use in silicon semiconductor technology[J].RCA Rev. , 1970, 31:187

    [8] Cullity B D. Elements of X-ray Diffractions [ M ]. Addisonwesley, Reading, MA, 1978, 102

    [9] Chen Y F, Bagnall D M, Koh H J, et al. Plasma assisted molecular beam epitaxy of ZnO on C-plane sapphire: growth and characterization[J]. J. Appl. Phys. , 1998, 84(7):3912

    [10] Gutoswski J, Presser N, Broser I. Acceptor-exciton complexes in ZnO: A comprehensive analysis of their electronic states by high-resolution magneto optics and excitation spectroscopy[ J ]. Phys. Rev. B, 1988, 38 ( 14-15 ): 9746-9758

    [11] Chen Y F, Bagnall D M, Zhu Z, et al. Growth of ZnO single crystal thin films on c-plane(0001 ) sapphire by plasma enhanced molecular beam epitaxy [ J ]. J. Cryst. Growth,1997, 181( 1 -2): 165-169

    [12] Bagnall D M, Chen Y F, Shen M Y, et al. Room temperature excitonic stimulated emission from Zinc Oxide epilayers grown by plasma-assisted MBE[J]. J. Cryst. Growth, 1998,184/185: 605-609

    [13] Vavshni Y P. Temperature dependence of the energy gap in semiconductors[J]. Physica, 1967, 34:149-152

    [14] Liang W Y, Yoffe A D. Transmission spectra of ZnO single crystals[J]. Phys. Rev. Lett. , 1968, 20(2 -8): 59-62

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY ON GROWTH AND OPTICAL PROPERTIES OF ZnO THIN FILMS ON Si( 111 ) SUBSTRATE BY PLASMA ASSISTED MOLECULAR BEAM EPITAXY(P-MBE)[J]. Journal of Infrared and Millimeter Waves, 2004, 23(2): 103
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