Researching | Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor

Journals >Journal of Semiconductors >Volume 43 >Issue 11 >Page 114101 > Article

Journal of Semiconductors
Vol. 43, Issue 11, 114101 (2022)

Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor

Hongrui Lv^1、2, Xianglong Shi³, Yujie Ai^1、2、*, Zhe Liu¹, Defeng Lin^1、4, Lifang Jia¹, Zhe Cheng¹, Jie Yang¹, and Yun Zhang^1、2、**

Author Affiliations

¹Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³Beijing Aerospace Micro-electronics Technology Co., Beijing 100854, China

⁴Lishui Zhongke Semiconductor Material Co., Ltd., Lishui 323000, China

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DOI: 10.1088/1674-4926/43/11/114101 Cite this Article

Hongrui Lv, Xianglong Shi, Yujie Ai, Zhe Liu, Defeng Lin, Lifang Jia, Zhe Cheng, Jie Yang, Yun Zhang. Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor[J]. Journal of Semiconductors, 2022, 43(11): 114101 Copy Citation Text

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References

[1] W Wang, X Xue, S Fan et al. Development of a wireless and passive temperature-compensated SAW strain sensor. Sens Actuators A, 308, 112015(2020).

[2] B Li, O Yassine, J Kosel. A surface acoustic wave passive and wireless sensor for magnetic fields, temperature, and humidity. IEEE Sensors J, 15, 453(2014).

[3] X Q Bao, W Burkhard, V V Varadan. et al. SAW Temperature sensor and remote reading system. IEEE 1987 Ultrasonics Symposium, 583(1987).

[4] I D Avramov, M Suohai. Surface transverse waves exceed the material Q limit for surface acoustic waves on quartz. IEEE Trans Ultrason, Ferroelectrics, Frequency Control, 43, 1133(1996).

[5] S Ballandras, R Lardat, L Penavaire et al. P1i-5 micro-machined, all quartz package, passive wireless saw pressure and temperature sensor. 2006 IEEE Ultrasonics Symposium, 1441(2006).

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[7] A Hassan, Y Savaria, M Sawan. GaN integration technology, an ideal candidate for high-temperature applications: A review. IEEE Access, 6, 78790(2018).

[8] A Müller, G Konstantinidis, V Buiculescu et al. GaN/Si based single SAW resonator temperature sensor operating in the GHz frequency range. Sens Actuators A, 209, 115(2014).

[9] A Qamar, S R Eisner, D G Senesky et al. Ultra-high-Q gallium nitride SAW resonators for applications with extreme temperature swings. J Microelectromechan Syst, 29, 900(2020).

[10] K Son, A Liao, G Lung et al. GaN-based high temperature and radiation-hard electronics for harsh environments. Nanosci Nanotechnol Lett, 2, 89(2010).

[11] F Bartoli, T Aubert, M Moutaouekkil et al. AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices. Sens Actuators A, 283, 9(2018).

[12] A Müller, G Konstantinidis, I Giangu et al. GaN-based SAW structures resonating within the 5.4–8.5 GHz frequency range, for high sensitivity temperature sensors. 2014 IEEE MTT-S International Microwave Symposium, 1(2014).

[13] A Müller, G Konstantinidis, A Stefanescu et al. Pressure and temperature determination with micromachined GAN/SI SAW based resonators operating in the GHZ frequency range. 2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems, 1073(2017).

[14] X Ji, W X Dong, Y M Zhang et al. Fabrication and characterization of one-port surface acoustic wave resonators on semi-insulating GaN substrates. Chin Phys B, 28, 067701(2019).

[15] S S Kushvaha, M S Kumar, K K Maurya et al. Highly c-axis oriented growth of GaN film on sapphire (0001) by laser molecular beam epitaxy using HVPE grown GaN bulk target. AIP Adv, 3, 092109(2013).

[16] Q Li, L Qian, S Fu et al. Characteristics of one-port surface acoustic wave resonator fabricated on ZnO/6H-SiC layered structure. J Phys D, 51, 145305(2018).

[17] Zou J. High quality factor Lamb wave resonators. EECS Department University of California, Berkeley Technical Report No. UCB/EECS-2014-217, 2014

[18] H R Lv, Y L Huang, Y J Ai et al. An experimental and theoretical study of impact of device parameters on performance of AlN/sapphire-based SAW temperature sensors. Micromachines, 13, 40(2021).

[19] O Elmazria, T Aubert. Wireless SAW sensor for high temperature applications: Material point of view. In: Smart Sensors, Actuators, and MEMS V. SPIE, 8066, 19(2011).

[20] W Dong, X Ji, J Huang et al. Sensitivity enhanced temperature sensor: one-port 2D surface phononic crystal resonator based on AlN/sapphire. Semicond Sci Technol, 34, 055005(2019).

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Hongrui Lv, Xianglong Shi, Yujie Ai, Zhe Liu, Defeng Lin, Lifang Jia, Zhe Cheng, Jie Yang, Yun Zhang. Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor[J]. Journal of Semiconductors, 2022, 43(11): 114101

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