• Journal of Semiconductors
  • Vol. 43, Issue 11, 114101 (2022)
Hongrui Lv1、2, Xianglong Shi3, Yujie Ai1、2、*, Zhe Liu1, Defeng Lin1、4, Lifang Jia1, Zhe Cheng1, Jie Yang1, and Yun Zhang1、2、**
Author Affiliations
  • 1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 3Beijing Aerospace Micro-electronics Technology Co., Beijing 100854, China
  • 4Lishui Zhongke Semiconductor Material Co., Ltd., Lishui 323000, China
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    DOI: 10.1088/1674-4926/43/11/114101 Cite this Article
    Hongrui Lv, Xianglong Shi, Yujie Ai, Zhe Liu, Defeng Lin, Lifang Jia, Zhe Cheng, Jie Yang, Yun Zhang. Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor[J]. Journal of Semiconductors, 2022, 43(11): 114101 Copy Citation Text show less
    (Color online) (a) Schematic picture of SAW resonators. (b) SEM image of IDT fingers.
    Fig. 1. (Color online) (a) Schematic picture of SAW resonators. (b) SEM image of IDT fingers.
    (Color online) (a) 2θ–ω XRD scan patterns of bulk GaN. XRD rocking curves of bulk GaN along (b) [0002]GaN and (c) [101¯2]GaN. (d) AFM image of bulk GaN in a range of 10 × 10µm2.
    Fig. 2. (Color online) (a) 2θ–ω XRD scan patterns of bulk GaN. XRD rocking curves of bulk GaN along (b) [0002]GaN and (c) [ 101¯2]GaN. (d) AFM image of bulk GaN in a range of 10 × 10µm2.
    (Color online) Frequency response (a)S11 and (b)S21 of the resonator, respectively. (c) Magnitude and (d) phase of input admittance of the resonator versus frequency.
    Fig. 3. (Color online) Frequency response (a)S11 and (b)S21 of the resonator, respectively. (c) Magnitude and (d) phase of input admittance of the resonator versus frequency.
    (Color online) (a) Schematic diagram of the SAW wireless temperature sensor. (b) Setup of GaN-based SAW wireless temperature sensing system. (c) RF power distribution in the frequency domain received by the transceiver from the resonator at 120 °C. (d) Temperature dependency offr of GaN-based SAW wireless sensor during heating and cooling, respectively. (e) Admittance magnitude |Y11| of SAW sensors versus frequency with various temperatures from 23 to 100 °C.
    Fig. 4. (Color online) (a) Schematic diagram of the SAW wireless temperature sensor. (b) Setup of GaN-based SAW wireless temperature sensing system. (c) RF power distribution in the frequency domain received by the transceiver from the resonator at 120 °C. (d) Temperature dependency offr of GaN-based SAW wireless sensor during heating and cooling, respectively. (e) Admittance magnitude |Y11| of SAW sensors versus frequency with various temperatures from 23 to 100 °C.
    SampleNIDTWL/WDirectionQr_phaseQa_phaseKt2 (%)
    A18030λ6m482967751.06
    B9060λ3/2m282520391.02
    C6090λ2/3m18835320.86
    D45120λ3/8m8084230.72
    E9030λ3m286822690.83
    F36030λ12m350056900.75
    G18030λ6a121617640.39
    Table 1. The performance of SAW resonators with different device parameters.
    Hongrui Lv, Xianglong Shi, Yujie Ai, Zhe Liu, Defeng Lin, Lifang Jia, Zhe Cheng, Jie Yang, Yun Zhang. Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor[J]. Journal of Semiconductors, 2022, 43(11): 114101
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