Study on Avalanche Multiplication Factor of 4H-SiC p-n Junction Based on Accurate Impact Ionization Model

XIONG Juncheng; HUANG Haimemg; ZHANG Zimin; ZHANG Guoyi

doi:10.13911/j.cnki.1004-3365.220156

[1] KIMOTO T, COOPER J A. Fundamental of silicon carbide technology ［M］. Singapore: John Wiley & Sons, 2014.

[2] ElASSER A, CHOW T P. Silicon carbide benefits and advantages for power electronics circuits and systems ［J］. Proceed IEEE, 2002, 90(6): 969-986.

[3] CHA H Y, SANDVIK P M. Electrical and optical modeling of 4H-SiC avalanche photodiodes ［J］, Japan J Appl Phys, 2008, 47(7): 5423-5425.

[4] BADAL A, BLANCO F, ROCCA P L, et al. Characterization of avalanche photodiodes (APDs) for the electromagnetic calorimeter in the ALICE experiment ［J］. Nucl Instrum Methods Phys Res A, 2008, 596(1): 122-125.

[5] MUSIENKO Y. New empirical expression for APD gain vs voltage dependence ［J］. J Instrum, 2017, 12(7): C07033.

[6] MILLER S L. Avalanche breakdown in germanium ［J］. Phys Rev, 1955, 99(4): 1234-1241.

[7] AKTURK A, GOLDSMAN N, ASLAM S, et al. Comparison of 4H-SiC impact ionization models using experiment and self-consistent simulations ［J］. J Appl Phys, 2008, 104(2): 026101-1-0.26101-3.

[8] NG B K, DAVID J P R, TOZER R C, et al. Nonlocal effects in thin 4H-SiC UV avalanche photodiodes ［J］. IEEE Trans Elec Dev, 2003, 50(8): 1724-1732.

[9] RAGHUNATHAN R, BALIGA B. Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC ［J］. Sol Sta Elec, 1999, 43(2): 199-211.

[10] KONSTANTINOV A O, WAHAB Q, NORDELL N, et al. Ionization rates and critical fields in 4H silicon carbide ［J］. Appl Phys Lett, 1997, 71(1): 9091.