[1] Liu Fei, Li Yanqiu. Design of high numerical aperture projection objective for industrial extreme ultraviolet lithography[J]. Acta Optica Sinica, 2011, 31(2): 0222003
[2] H. Kang, S. Hansen, Jan van Schoot et al.. EUV simulation extension study for mask shadowing effect and its correction[C]. SPIE, 2008, 6921: 69213I
[3] T. Schmoeller, T. Klimpel, I. Kim et al.. EUV pattern shift compensation strategies[C]. SPIE, 2008, 6921: 69211B
[4] M. Born, E. Wolf. Principles of Optics[M]. Cambridge: Cambridge University Press, 2001. 412~514
[5] P. Evanschitzky, A. Erdmann. Fast near field simulation of optical and EUV masks using the waveguide method[C]. SPIE, 2007, 6533: 65330Y
[6] K. Adam. Domain Decomposition Methods for the Electromagnetic Simulation of Scattering from Three-Dimensional Structures with Applications in Lithography[D]. Berkeley: University of California, 2001
[7] C. Sambale, T. Schmoeller, A. Erdmann et al.. Rigorous simulation of defective EUV multilayer masks[C]. SPIE, 2003, 5256: 1239~1248
[8] C. H. Clifford, A.R. Neureuther. Fast simulation of buried EUV mask defect interaction with absorber features[C]. SPIE, 2007, 6517: 65170A
[9] Cao Yuting, Wang Xiangzhao, Qiu Zicheng et al.. Simplified model for mask diffraction in extreme-ultraviolet projection lithography[J]. Acta Optica Sinica, 2011, 31(4): 0405001
[10] Cao Yuting, Wang Xiangzhao, A. Erdmann et al.. Analytical model for EUV mask diffraction field calculation[C]. SPIE, 2011, 8171: 81710N
[11] Tim Fuhner, Thomas Schnattinger, Gheorghe Ardelean et al.. Dr.LiTHO: a development and research lithography simulator[C]. SPIE, 2007, 6520: 65203F
[12] M. C. Lam, A. R. Neureuther. Simplified model for absorber feature transmissions on EUV masks[C]. SPIE, 2006, 6349: 63492H
[13] Vivek Bakshi. EUV Lithography[M]. Washington: SPIE Press, 2009. 326~373