• Laser & Optoelectronics Progress
  • Vol. 59, Issue 3, 0314001 (2022)
Yaobin Li1、2, Ming Li1、2, pingping Qiu1、2, Weinian Yan1、2, Ruiwen Jia1、2, and Qiang Kan1、2、*
Author Affiliations
  • 1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronics Technology, University of Chinese Academy of Sciences, Beijing 100049, China
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    DOI: 10.3788/LOP2022259.0314001 Cite this Article Set citation alerts
    Yaobin Li, Ming Li, pingping Qiu, Weinian Yan, Ruiwen Jia, Qiang Kan. Design of High Power Low Loss 852 nm Fabry-Perot Laser[J]. Laser & Optoelectronics Progress, 2022, 59(3): 0314001 Copy Citation Text show less
    Carrier concentration distribution of the laser at 500 mA injection current
    Fig. 1. Carrier concentration distribution of the laser at 500 mA injection current
    Field distribution and effective refractivity parameter of laser
    Fig. 2. Field distribution and effective refractivity parameter of laser
    Internal loss changes with W of the P-waveguide layer, doping concentration of P-cladding layer, and waveguide layer
    Fig. 3. Internal loss changes with W of the P-waveguide layer, doping concentration of P-cladding layer, and waveguide layer
    Schematic for optimizing doping concentration in waveguide and laser structures
    Fig. 4. Schematic for optimizing doping concentration in waveguide and laser structures
    Simulation of electron and hole concentration distributions of lasers with different structures at same injection current. (a) Electron concentration distribution; (b) hole concentration distribution
    Fig. 5. Simulation of electron and hole concentration distributions of lasers with different structures at same injection current. (a) Electron concentration distribution; (b) hole concentration distribution
    Current density distributions in vertical direction. (a) Electron; (b) hole
    Fig. 6. Current density distributions in vertical direction. (a) Electron; (b) hole
    Experimental results. (a) Internal loss and internal quantum efficiency versus doping concentration of P-cladding layer; (b) internal loss and internal quantum efficiency versus Al composition of different AlXGa1-XAs materials
    Fig. 7. Experimental results. (a) Internal loss and internal quantum efficiency versus doping concentration of P-cladding layer; (b) internal loss and internal quantum efficiency versus Al composition of different AlXGa1-XAs materials
    Room temperature PL spectrum of FP laser
    Fig. 8. Room temperature PL spectrum of FP laser
    Spectrogram of FP laser
    Fig. 9. Spectrogram of FP laser
    Cross section of the FP laser
    Fig. 10. Cross section of the FP laser
    Relationship between cavity length and inverse external differential efficiency
    Fig. 11. Relationship between cavity length and inverse external differential efficiency
    Experimental and theoretical results of optical and electrical characteristics
    Fig. 12. Experimental and theoretical results of optical and electrical characteristics
    Current density distribution diagrams with different structures in epitaxial direction. (a) Electron; (b) hole
    Fig. 13. Current density distribution diagrams with different structures in epitaxial direction. (a) Electron; (b) hole
    Far-field test results. (a) Direction of divergence angle of fast axis; (b) direction of divergence angle of slow axis
    Fig. 14. Far-field test results. (a) Direction of divergence angle of fast axis; (b) direction of divergence angle of slow axis
    Yaobin Li, Ming Li, pingping Qiu, Weinian Yan, Ruiwen Jia, Qiang Kan. Design of High Power Low Loss 852 nm Fabry-Perot Laser[J]. Laser & Optoelectronics Progress, 2022, 59(3): 0314001
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