[2] Rogalski A. Recent progress in infrared detector technologies, Infrared Phys[J]. Technol, 2011, 54: 136-154.
[3] Goldberg A C, Fischer T, Kennerly S W, et al. Dual-band QWIP MWIR/LWIR focal plane array test results[C]// Proceedings of SPIE, 2000, 4028(9): 615-623.
[4] Smith D L, Mailhiot C. Proposal for strained type II superlattice infrared detectors[J]. Journal of Applied Physics, 1987, 62(6): 2545.
[5] Sun Yaoyao, Han Xi, Lv Yuexi, et al. Performance of dual-color Mid-/long-wavelength infrared detectors based on type-II InAs/GaSb superlattice[J]. Aero Weaponry, 2018, 4(2): 56-59. (in Chinese)
[7] Razeghi M, Haddadi A, Hoang A M, et al. Antimonide-based type II superlattices: A superior candidate for the third ceneration of infrared imaging systems[J]. Journal of Electronic Materials, 2014, 43(8): 2802-2807.
[9] Rehm R, Walther M, Schmitz J. Two-color infrared photodetector using InAsGaSb superlattices[J]. Electronics Letters, 2006, 42: 10-13.
[10] Rehm Robert, Walther Martin, Schmitz Johannes, et al. 2nd and 3rd generation thermal imager based on type-II superlattice photodiodes[C]//Infrared and Photoelectronic Imagers and Detector Devices II, 2006, 6294: 6294041-6294047.
[11] Gail J Brown, Shanee Houston, Frank Szmulowicz. Type II InAs/GaSb superlattices for high performance photodiodes and FPAs[J]. Physica E, 2004, 20: 471-474.
[12] Sullivan G J, Ikhlassi A, Bergman J. High performance type II InAs-GaSb superlattices for mid, long, and very long wavelength infrared focal plane arrays[C]//SPIE, 2005, 5783: 131-138.
[13] Andrew Hood, Manijeh Razeghi, Edward H Aifer. MBE growth and characterization of type-II InAs-GaSb superlattices for mid-infrared detection[J]. Appl Phys Lett, 2005, 87: 151113.
[14] Cory J Hill, Jian V Li, Jason M Mumolo. Type II InAsGaSb superlattices for high performance photodiode and FPAs[C]//SPIE, 2006, 6206: 62060P.
[15] Robert Rehm, Martin Walther, Johannes Schmitz. MBE grown type-II MWIR and LWIR superlattice photodiodes[C]//SPIE, 2005, 5957: 595707.
[16] Razeghi M, Hoang A M, Chen G, et al. High-performance bias-selectable dual-band short-/mid-wavelength infrared photodetectors and focal plane arrays based on InAs/GaSb/AlSb type-II superlattices [C]//SPIE, 2013, 8704: 87041W.
[17] Sun Yaoyao, Han Xi, Hao Hongyue, et al. 320×256 short-mid-wavelengh dual-color infrared focal plane arrays based on type-II InAs/GaSb superlattice[J]. Infrared Physics & Technology, 2017, 82: 140-143.
[18] Hong B H, Rybchenko S I, Itskevich I E, et al. Applicability of the kp method to modeling of InAs/GaSb short-period superlattices[J]. Physical Review B, 2009, 79:165323.
[19] Pierre-Yves Delaunay, Andrew Hood, Binh Minh Nguyen, et al. Passivation of type-II InAs/GaSb double heterostructure[J]. Appl Phys Lett, 2007, 91: 091112.
[20] Xiang Wei, Wang Guowei, Xu Yingqiang, et al. InAs/GaSb superlattices mid-wavelength infrared focal plane array detectors[J]. Aero Weaponry, 2015(1): 49-51. (in Chinese)
[21] Zhang Lixue, Sun Weiguo, Lv Yanqiu, et al. Anodic fluoride passivation of type II InAs/GaSb superlattice for shortwave infrared detector[J]. Applied Physics A, 2015, 118(2): 547-551.