InAs/GaSb superlattice material has become the primary choice for the fabrication of the third-generation infrared detectors． Practical researches on detector design, material epitaxy, chip processing, etc were carried out. 320×256 dual-color focal plane arrays with excellent performance was fabricated. Firstly, a mid-/short-wavelength dual-color chip structure was designed based on two back-to-back n-i-p junctions with voltage selection structure. Then the PNP superlattice material with complete structure, smooth surface and low defect density was grown by molecular beam epitaxy(MBE). The device was passivated with sulfide treatment and a SiO2 layer. Finally, at 77 K, the RA value of middle-wave channel reached 13.6 kΩ·cm2 and the short-wave channel reached 538 kΩ·cm2. The spectral response indicated the short-wave response band of 1.7-3 μm and the middle-wave of 3-5 μm. The middle-wave channel exhibited a detectivity value of 3.7×1011 cm·Hz1/2W-1, a photo-response non-uniformity of 9.9% and an effective pixel rate of 98.46%, while the short-wave channel exhibited a detectivity value of 2.2×1011 cm·Hz1/2W-1, a photo-response non-uniformity of 9.7% and an effective pixel rate of 98.06%.