• Microelectronics
  • Vol. 51, Issue 2, 211 (2021)
LI Bo, LI Jianzhuang, GAN Xuchun, and HUANG Xiaozong
Author Affiliations
  • [in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.200305 Cite this Article
    LI Bo, LI Jianzhuang, GAN Xuchun, HUANG Xiaozong. A Kind of ESD Protection Technology Using System in Package[J]. Microelectronics, 2021, 51(2): 211 Copy Citation Text show less

    Abstract

    A kind of electrostatic discharge (ESD) protection technology using system in package (SiP) was presented. A SiP ESD protection circuit was realized by using TVS diodes to construct a reasonable ESD current discharge path. The anti ESD capability of core chip was improved from HBM 2 000V to 8 000V. Compared with the on chip ESD protection technology, the SiP ESD protection technology could significantly improve the ESD ability, shorten the design cycle, and be compatible with the original chip package size, which could be widely used in the product of SiP circuit.
    LI Bo, LI Jianzhuang, GAN Xuchun, HUANG Xiaozong. A Kind of ESD Protection Technology Using System in Package[J]. Microelectronics, 2021, 51(2): 211
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