Runyu Huang, Weilin Zhao, Hui Zeng, Zaibo Li, Zepeng Hou, Haifeng Ye, Wei Wang, Jiaxin Zhang, Chen Liu, Xueyan Yang, Hongxia Zhu, Yanli Shi, Yuntian Jiang. Development and Application of InP-Based Single Photon Detectors[J]. Laser & Optoelectronics Progress, 2021, 58(10): 1011009
- Laser & Optoelectronics Progress
- Vol. 58, Issue 10, 1011009 (2021)
Fig. 1. Structure of diffused junction GM-APD
![Relationship between gate amplitudes, temperatures, and normalized DCR, afterpulse probablity and PDE. (a) SPAD #1; (b) SPAD #2 [8]](/richHtml/lop/2021/58/10/1011009/img_2.jpg)
Fig. 2. Relationship between gate amplitudes, temperatures, and normalized DCR, afterpulse probablity and PDE. (a) SPAD #1; (b) SPAD #2 [8]
Fig. 3. Relationship between excess noise and device gain
Fig. 4. Measurement curves under 2 μm illumination at room temperature. (a) Device A; (b) device B[17]
Fig. 5. MAGIC detector. (a) MAGIC detector equivalent circuit; (b) an exemplary design of the MAGIC detector with InGaAs/InP material[19]
Fig. 6. Results of Monte Carlo simulation. (a) Distribution of single-photon current response from Monte Carlo simulations; (b) dependence of current output on the number of photons in the input signal[19]
Fig. 7. Structure and working principle of self-quenching and self-recovery detector. (a) Structure; (b) working principle[22]
Fig. 8. NFAD top integrated resistance[26]
Fig. 9. Relationship between afterpulse probability and PDE of the self quenching SPADs with monolithic integrated passive quenching resistor[27]
Fig. 10. 1024 pixel performance maps of InGaAs/InP (1.55 μm) SPADs 32 × 32 focal plane arrays. (a) DCR of all pixels is kHz, less than 50 kHz; (b) average pixel PDE is 22%, taking into account all optical losses related to microlens array and other insertion[27]
Fig. 11. Relevant parameters and cross section diagram of GM-APD. (a) Relationship between PDE,crosstalk and over bias of GM-APD; (b) cross section of InP GM-APD array combined with MLA[31]
Fig. 12. 1×16 InGaAs/InP SPAD line array[34]
Fig. 13. Schematic of optical path between two pixels. (a) Without metal trenches; (b) with metal trenches[34]
Fig. 14. Schematic cross section and electric field profile of Alx In1-x Asy Sb1-y SAGCM APD[41]
Fig. 15. External quantum efficiency versus wavelength of a 150-μm-diameter AlxIn1-xAsySb1-y SAGCM APD at 300 K[41]
Fig. 16. EQE as a function of wavelength at 27 V and 23 V reverse bias for devices A and B, respectively[17]
Fig. 17. Current-voltage and gain. (a) Devices A; (b) devices B[17]
Fig. 18. Device structure diagram and energy band arrangement of Ga0.47In0.53As/GaAs0.51S
Fig. 19. Relationship between dark current and reverse bias voltage of 200 μm devices[43]
Fig. 20. Image of InGaAs / InP GM-APD 32 × 32 array. (a) 800 m target and imaging; (b) 6800 m target and imaging[47]
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Table 1. Parameters of device layer structure[44]
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