70 nm gate-length InAs PHEMTs with maximum oscillation frequency of 640 GHz

Zhang Lisen; Xing Dong; Xu Peng; Liang Shixiong; Wang Junlong; Wang Yuangang; Yang Dabao; Feng Zhihong

doi:10.3788/irla201645.0720004

[1] Axel T. 220-GHz metamorphic HEMT amplifier MMICs for high-resolution imaging applications[J]. IEEE Journal of Solid-State Circuits, 2005, 40(10): 2070-2076.

[2] Seung J O, Yong M H, Seungjoo H, et al. Medical application of THz imaging technique[C]//37th International Conference on Infrared, Millimeter, and Terahertz Waves, 2012: 1-3.

[3] Radoslaw P, Thomas K O, Norman K, et al. Short-range ultra-broadband terahertz communications: concepts and perspectives[J]. IEEE Antennas and Propagation Magazine, 2007, 49(6): 24-39.

[4] Ho J S, Tadao N. Present and future of terahertz communications[J]. IEEE Trans TeraHz Sci Technol, 2011, 1(1): 256-263.

[5] Norbert P, Mieczyslaw S, Marcin K, et al. THz spectroscopy and imaging in security applications[C]//19th International Conference on Microwaves, Radar and Wireless Communications, 2012: 265-270.

[6] Hai B L, Hua Z, Nicholas K, et al. Terahertz spectroscopy and imaging for defense and security applications[J]. Proceedings of the IEEE, 2007, 95(8): 1514-1527.

[7] Lorene A S. An overview of solid-state integrated circuit amplifiers in the submillimeter-wave and THz regime[J]. IEEE Transactions on Terahertz Science and Technology, 2011, 1(1): 9-24.

[8] Dae H K, Jesus A A. 30-nm InAs PHEMTs with fT=644 GHz and fmax=681 GHz[J]. IEEE Electron Device Letters, 2010, 31(8): 806-808.

[9] Xiao B M, Wayne Y, Mike L, et al. First demonstration of amplification at 1 THz using 25-nm InP high electron mobility transistor process[J]. IEEE Electron Device Letters, 2015, 36(4): 327-329.

[10] Dae H K, Berinder B, Jesus A A. fT=688 GHz and fmax=800 GHz in Lg = 40 nm In0.7Ga0.3As MHEMTs with gm_max >2.7 mS/·m[C]//IEEE International Electron Devices Meeting, 2011: 319-322.

[11] Dae H K, Jesus A A, Peter C, et al. 50-nm E-mode In0.7Ga0.3As PHEMTs on 100-mm InP substrate with fmax>1 THz[C]//IEEE International Electron Devices Meeting, 2010: 692-695.

[12] Tae W K, Dae H K, Jesus A A. 60 nm self-aligned-gate InGaAs HEMTs with record high-frequency characteristics[C]//IEEE International Electron Devices Meeting, 2010: 696-699.

[13] William D, Xiao B M, Kevin M K H L, et al. THz monolithic integrated circuits using InP high electron mobility transistors[J]. IEEE Transactions on Terahertz Science and Technology, 2011, 1(1): 25-32.

[14] Mike B, Mike B, Xiao B M, et al. Advanced InP and GaAs HEMT MMIC technologies for MMW commercial products[C]//65th Annual Device Research Conference, 2007: 147-148.

[15] Leuther A, Axel T, Hermann M, et al. 450 GHz amplifier MMIC in 50 nm metamorphic HEMT technology[C]//International Conference on IPRM, 2012: 229-232.

[16] Axel T, Leuther A, Hermann M, et al. A high gain 600 GHz amplifier TMIC using 35 nm metamorphic HEMT technology[C]//IEEE CSICS, 2012: 1-4.

[17] Keisuke S, Wonill Ha, Maik J W R, et al. Extremely high gm>2.2 S/mm and fT>550 GHz in 30-nm enhancement-mode InP-HEMTs with Pt/Mo/Ti/Pt/Au buried gate[C]//IEEE 19th International Conference on IPRM, 2007: 18-21.

[18] Wonill Ha, Keisuke S, Griffith Z, et al. High performance InP HEMT technology with multiple interconnect layers for advanced RF and mixed signal circuits[C]//IEEE International Conference on IPRM, 2009: 115-119.

[19] Akira E, Issei W, Takashi M, et al. High-speed InP-HEMTs: low-noise performance and cryogenic operation[C]//23rd International Conference on IPRM, 2011: 1-4.

[20] Yoshimi Y, Akira E, Keisuke S, et al. Pseudomorphic In0.52Al0.48As/In0.7Ga0.3As HEMTs with an ultrahigh fT of 562 GHz[J]. IEEE Electron Device Letters, 2002, 23(10): 573-575.

[21] Tetsuya S, Haruki Y, Tetsuyoshi I, et al. 30-nm two-step recess gate InP-based InAlAs/InGaAs HEMTs[J]. IEEE Transactions on Electron Devices, 2002, 49(10): 1694-1700.

[22] Tetsuya S, Haruki Y, Yohtaro U, et al. High-performance 0.1 μm gate enhancement-mode InAlAs/InGaAs HEMT's using two-step recessed gate technology[J]. IEEE Transactions on Electron Devices, 1999, 46(6): 1074-1080.

[23] Seong J Y, Myonghwan P, JeHyuk C, et al. 610 GHz InAlAs/In0.75GaAs metamorphic HEMTs with an ultra-short 15 nm gate[C]//IEEE International Electron Devices Meeting, 2007: 613-616.

[24] Byeong O L, Mun K L, Tae J B, et al. 50-nm T-Gate InAlAs/InGaAs metamorphic HEMTs with low noise and high fT characteristics[J]. IEEE Electron Device Letters, 2007, 28(7): 546-548.

[25] Sung C K, Dan A, Byeong O L, et al. High performance 94-GHz single balanced mixer using 70-nm MHEMTs and surface micromachined technology[J]. IEEE Electron Device Letters, 2006, 27(1): 28-30.

[26] Elgaid K, McLelland H, Holland M, et al. 50-nm T-gate metamorphic GaAs HEMTs with fT of 440 GHz and noise figure of 0.7 dB at 26 GHz[J]. IEEE Electron Device Letters, 2005, 26(11): 784-786.

[27] Kang S Lee, Young S Kim, Yun K Hong, et al. 35-nm zigzag T-gate In0.52Al0.48As/In0.53Ga0.47As metamorphic GaAs HEMTs with an ultrahigh fmax of 520 GHz[J]. IEEE Electron Device Letters, 2007, 28(8): 672-675.