Characteristics and Progress of Vertical-Cavity Surface-Emitting Semiconductor Lasers

Yujiao Li; Nan Zong; Qinjun Peng

doi:10.3788/LOP55.050006

Journals >Laser & Optoelectronics Progress >Volume 55 >Issue 5 >Page 050006 > Article

Laser & Optoelectronics Progress
Vol. 55, Issue 5, 050006 (2018)

Characteristics and Progress of Vertical-Cavity Surface-Emitting Semiconductor Lasers

Yujiao Li^{1、2、1; 2;}, Nan Zong^{、1*; *;}, and Qinjun Peng^1、1;

Author Affiliations

¹ Key Laboratory of Solid State Laser, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China

² University of Chinese Academy of Sciences, Beijing 100049, China

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DOI: 10.3788/LOP55.050006 Cite this Article Set citation alerts

Yujiao Li, Nan Zong, Qinjun Peng. Characteristics and Progress of Vertical-Cavity Surface-Emitting Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2018, 55(5): 050006 Copy Citation Text

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Fig. 1. Schematic of VCSEL. (a) Top-emitting; (b) bottom-emitting

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Fig. 2. Device structure chart of EP-VECSEL

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Fig. 3. Edge-pumped setup of OP-VECSEL

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Fig. 4. End-pumped setup of OP-VECSEL

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Fig. 5. Schematic of the passively mode-locked OP-VECSEL. (a) V-shaped cavity; (b) Z-shaped cavity

Yujiao Li, Nan Zong, Qinjun Peng. Characteristics and Progress of Vertical-Cavity Surface-Emitting Semiconductor Lasers[J]. Laser & Optoelectronics Progress, 2018, 55(5): 050006

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