Research on Chaos Resynchronization Time of Vertical-Cavity Surface-Emitting Lasers

Wu Mei; Wang Longsheng; Wang Yuncai; Wang Anbang

doi:10.3788/LOP57.210607

Journals >Laser & Optoelectronics Progress >Volume 57 >Issue 21 >Page 210607 > Article

Laser & Optoelectronics Progress
Vol. 57, Issue 21, 210607 (2020)

Research on Chaos Resynchronization Time of Vertical-Cavity Surface-Emitting Lasers

Wu Mei^1、2, Wang Longsheng^1、2, Wang Yuncai^1、3、4, and Wang Anbang^{1、2、3、*}

Author Affiliations

¹新型传感器与智能控制教育部重点实验室(太原理工大学), 山西太原 030024

²太原理工大学物理与光电工程学院, 山西太原 030024

³广东工业大学信息工程学院, 广东广州 510006

⁴广东省光子学信息技术重点实验室, 广东广州 510006

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DOI: 10.3788/LOP57.210607 Cite this Article Set citation alerts

Wu Mei, Wang Longsheng, Wang Yuncai, Wang Anbang. Research on Chaos Resynchronization Time of Vertical-Cavity Surface-Emitting Lasers[J]. Laser & Optoelectronics Progress, 2020, 57(21): 210607 Copy Citation Text

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Open-loop system structure and VCSEL performance curves. (a) Unidirectional open-loop synchronization system based on VCSEL; (b) P-I characteristic curves of free-running VCSEL

Fig. 1. Open-loop system structure and VCSEL performance curves. (a) Unidirectional open-loop synchronization system based on VCSEL; (b) P-I characteristic curves of free-running VCSEL

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Resynchronization transient process and CRT calculation method. (a) Step change of injection rate and normalized intensity of M-VCSEL; (b) normalized intensity of s-vcsel; (c) synchronization error

Fig. 2. Resynchronization transient process and CRT calculation method. (a) Step change of injection rate and normalized intensity of M-VCSEL; (b) normalized intensity of s-vcsel; (c) synchronization error

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Fig. 3. Influence of different laser parameters on CRT in X-PC. (a) I/I_th; (b) γ_N; (c) k; (d) g

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Fig. 4. Relationship between CRT and ROT in X-PC under different laser parameters. (a) I/I_th; (b) γ_N; (c) k; (d)g

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Fig. 5. Influence of different laser parameters on CRT in X-PC. (a) α; (b) γ_α; (c) γ_p; (d) γ_s

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Fig. 6. Influence of different injection parameters on CRT in X-PC. (a) k_j; (b) Δν

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Fig. 7. Influence of different laser parameters on CRT in Y-PC. (a) I/I_th; (b) k_j; (c) Δν

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Symbol	Parameter	Value
k/ns^-1	Field decay rate	300
α	Linewidth enhancement factor	3
γ_α/ns^-1	Linear dichroism	0.5
γ_p/ns^-1	Linear birefringence	30
γ_N/ns^-1	Carrier decay rate	1
γ_s/ns^-1	Spin-flip relaxation rate	50
λ/nm	Central wavelength	850
β_SP/ns^-1	Spontaneous emission rate	10^-6
μ	μ parameter	μ=1+(τ_n/τ_e)[(I/I_th)-1]/[1-N₀/N_th]
τ_n/τ_e	Ratio of differential carrier lifetime and carrier lifetime at threshold	0.4
e/C	Electric charge	1.602×10^-19
Γ	Confinement factor	0.21
g/(m³·s^-1)	Gain coefficient	2×10^-12
V/m³	Active region volume	0.44×10^-18
N₀/m^-3	Transparency carrier density	2.5×10²⁴
N_th/m^-3	Threshold carrier density	N_th=N₀+2k/Γg
I_th/mA	Threshold current	I_th=eVN_th/τ_e=0.4eVN_thγ_N
I/mA	Bias current	Variable
k_f/ns^-1	Feedback rate	5
τ_f/ns	Feedback delay time	3

Table 1. VCSEL simulation parameter values^[27-29]

Wu Mei, Wang Longsheng, Wang Yuncai, Wang Anbang. Research on Chaos Resynchronization Time of Vertical-Cavity Surface-Emitting Lasers[J]. Laser & Optoelectronics Progress, 2020, 57(21): 210607

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