• Microelectronics
  • Vol. 51, Issue 5, 627 (2021)
XU Quankun1、2, LI Ruzhang2、3, WANG Zhongyan3, YANG Xiaoyu1、2, and XIAO Yu1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210054 Cite this Article
    XU Quankun, LI Ruzhang, WANG Zhongyan, YANG Xiaoyu, XIAO Yu. An All MOS High Precision Voltage Reference Source Circuit[J]. Microelectronics, 2021, 51(5): 627 Copy Citation Text show less
    References

    [1] AKSHAYA R, SIVA S Y. Design of an improved bandgap reference in 180 nm CMOS process technology [C]//2nd IEEE Int Conf RTEICT. Bangalore, India. 2017: 521-524.

    [3] KOUDOUNAS S, ANDREOU C M, GEORGIOU J. A novel CMOS bandgap reference circuit with improved high-order temperature compensation [C]//Proceed IEEE ISCS. Paris, France. 2010: 4073-4076.

    [9] HAMOUDA A, ARNOLD R, MANCK O, et al. 7.72 ppm/℃, ultralow power, high PSRR CMOS bandgap reference voltage [C]//IFIP/IEEE 21st Int Conf VLSI-SoC. Istanbul, Turkey. 2013: 364-367.

    XU Quankun, LI Ruzhang, WANG Zhongyan, YANG Xiaoyu, XIAO Yu. An All MOS High Precision Voltage Reference Source Circuit[J]. Microelectronics, 2021, 51(5): 627
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