• Microelectronics
  • Vol. 51, Issue 5, 627 (2021)
XU Quankun1,2, LI Ruzhang2,3, WANG Zhongyan3, YANG Xiaoyu1,2, and XIAO Yu1,2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210054 Cite this Article
    XU Quankun, LI Ruzhang, WANG Zhongyan, YANG Xiaoyu, XIAO Yu. An All MOS High Precision Voltage Reference Source Circuit[J]. Microelectronics, 2021, 51(5): 627 Copy Citation Text show less

    Abstract

    A high precision reference circuit was designed in a 0.35 μm CMOS process. All MOSFETs were adopted to avoid resistors, leading to smaller chip area. A new variable resistance method was adopted to realize accurate compensation. A two-stage voltage reference source was adopted to improve the power suppression ratio. The voltage reference source was simulated using Cadence Virtuoso. The results showed that when the temperature ranged from -40 ℃ to 125 ℃, the reference voltage was 1.146 V and the temperature coefficient was 1.025×10-5℃-1. At 27 ℃, the static current was 6.57 μA, and the PSRR was -96.64 dB @100 Hz and -93.94 dB @10 kHz. The linear adjustment degree of the voltage reference was 0.047% at 2.9 to 5 V power supply voltage. This circuit was suitable for analog integrated circuits with low power consumption and high precision.