• Microelectronics
  • Vol. 51, Issue 5, 627 (2021)
XU Quankun1、2, LI Ruzhang2、3, WANG Zhongyan3, YANG Xiaoyu1、2, and XIAO Yu1、2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.210054 Cite this Article
    XU Quankun, LI Ruzhang, WANG Zhongyan, YANG Xiaoyu, XIAO Yu. An All MOS High Precision Voltage Reference Source Circuit[J]. Microelectronics, 2021, 51(5): 627 Copy Citation Text show less

    Abstract

    A high precision reference circuit was designed in a 0.35 μm CMOS process. All MOSFETs were adopted to avoid resistors, leading to smaller chip area. A new variable resistance method was adopted to realize accurate compensation. A two-stage voltage reference source was adopted to improve the power suppression ratio. The voltage reference source was simulated using Cadence Virtuoso. The results showed that when the temperature ranged from -40 ℃ to 125 ℃, the reference voltage was 1.146 V and the temperature coefficient was 1.025×10-5℃-1. At 27 ℃, the static current was 6.57 μA, and the PSRR was -96.64 dB @100 Hz and -93.94 dB @10 kHz. The linear adjustment degree of the voltage reference was 0.047% at 2.9 to 5 V power supply voltage. This circuit was suitable for analog integrated circuits with low power consumption and high precision.
    XU Quankun, LI Ruzhang, WANG Zhongyan, YANG Xiaoyu, XIAO Yu. An All MOS High Precision Voltage Reference Source Circuit[J]. Microelectronics, 2021, 51(5): 627
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