• Acta Optica Sinica
  • Vol. 22, Issue 2, 174 (2002)
[in Chinese]1、2、*, [in Chinese]1, [in Chinese]1、3, [in Chinese]1, and [in Chinese]1
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Rate Equation Analysis of Erbium Doped Optical Waveduide Amplifiers[J]. Acta Optica Sinica, 2002, 22(2): 174 Copy Citation Text show less
    References

    [1] Nykolak G, Haner M, Becker P C et al.. Systems evaluation of an Er 3+ doped planar waveguide amplifier. IEEE Photon. Technol. Lett., 1993, 5(10):1185~1187

    [2] Ohtsuki T, Honkanen S, Najafi S I et al.. Gain characteristics of a high concentration Er 3+ doped phosphate glass waveguide. J. Appl. Phys., 1995, 78(6):3617~3621

    [3] Choi Y B, Cho S H. Er Al codoped silicate planar light waveguide type amplifier fabricated by radio frequency sputtering. Opt. Lett., 2000, 25(4):263~265

    [4] Abouelleil M M, Ball G A,Nighan W L. Low loss erbium doped ion exchanged channel waveguides. Opt. Lett., 1991, 16(24):1949~1951

    [6] Pasquale F D, Zoboli M. Analysis of erbium doped waveguide amplifiers by a full vectorial finite element method. IEEE J. Lightwave Technol., 1993, 11(10):1565~1573

    [7] Caccavale F, Segato F, Mansour I. A numerical study of erbium doped active LiNbO3 waveguides by the beam propagation method. IEEE J. Lightwave Technol., 1997, 15(12):2294~2299

    [8] Vermelho M V D, Ulf P, Stewart A J. Simple and accurate procedure for modeling erbium doped waveguide amplifiers with high concentration. IEEE J. Lightwave Technol., 2000, 18(3):401~407

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Rate Equation Analysis of Erbium Doped Optical Waveduide Amplifiers[J]. Acta Optica Sinica, 2002, 22(2): 174
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