• Chinese Journal of Quantum Electronics
  • Vol. 22, Issue 1, 102 (2005)
[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]2
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  • 1[in Chinese]
  • 2[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and application of silicon nitride passivation film[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 102 Copy Citation Text show less
    References

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    [4] Mitsuo Iijima, Yuji Watanabe. Ultrasonic joining of silicon nitride plates without an adhesive material using a 19 kHz vibration system [J]. Jpn. J. Appl. Phys., 2001, 40(5B): 3789.

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    [8] Chen Junfang, Ren Zhaoxing. Ion energy distribution in an ECR plasma chamber [J]. Vacuum, 1999, 52: 411-414.

    [10] McMahon C J, Jr, Marchut L. Solute segregation in iron-based alloys [J]. J. Vac. Sci. Technol., 1978, 15: 450.

    [11] Aitken J M, Young D R. Electron trapping by radiation-induced charge in MOS devices [J]. J. Appl. Phys., 1976,47: 1196.

    [12] DiMaria D J, Weinberg Z A, Aitken J M. Location of positive charges in SiO2 films on Si generated by vuv photons, X- rays, and high-field stressing [J]. J. Appl. Phys., 1977, 48: 898.

    [13] Chen Junfang, Ren zhaoxing, et al. Study on the optical properties and hydrogen content of the silicon nitride thin film [J]. Acta Physic Sinica (Overseas Edition), 1995, 3(9): 698-704.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and application of silicon nitride passivation film[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 102
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