Preparation and application of silicon nitride passivation film

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 22 >Issue 1 >Page 102 > Article

Chinese Journal of Quantum Electronics
Vol. 22, Issue 1, 102 (2005)

Preparation and application of silicon nitride passivation film

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and application of silicon nitride passivation film[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 102 Copy Citation Text

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Abstract

The Si3N4 passivation films were deposited on the UHF high power semiconductor transistor chip by ECR-PECVD and the chip was passivated. The electric properties of passivated chip were analyzed. The results show that the electric properties of semiconductor chip have been improved, in which the reverse breakdown voltage is increased and the reverse leakage current is reduced. The ratio of finished product has been improved.

Keywords

chip ECR-PECVD optoelectronics Si3N4 passivation film

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and application of silicon nitride passivation film[J]. Chinese Journal of Quantum Electronics, 2005, 22(1): 102

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