• Chinese Journal of Quantum Electronics
  • Vol. 22, Issue 4, 538 (2005)
[in Chinese]1、2、*, [in Chinese]1, [in Chinese]1、2, and [in Chinese]1
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  • 1[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. LD-pumped eye-safe Nd:YAG laser at 1.44μm[J]. Chinese Journal of Quantum Electronics, 2005, 22(4): 538 Copy Citation Text show less
    References

    [1] Kretschmann H M, Heine F, Ostroumov V G, et al. High-power diode-pumped continumous-wave Nd3+ lasers at wavelengths near 1.44μm [J]. Opt. Lett., 1997, 22(7): 466-468.

    [2] Agnesi A, Dell'Acqua S, Pennacchio C, et al. High-repetition-rate Q-switched diode-pumped Nd:YAG laser at 1.444μm [J]. Appl. Opt., 1998, 37(18): 3984-3986.

    [3] Norman H, et al. Efficient 100 W Nd:YAG laser operating at a wavelength of 1.444 μm [J]. Opt. Lett., 1994,19(17): 1328-1330.

    [4] Podlipensky A V, Yumashev K V, Kuleshov N V, et al. Passive Q-switching of 1.44 μm and 1.34 μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber [J]. Appl. Phys. B, 2003, 76: 245-247.

    [6] Malyarevich A M, Denisov I A, Yumashev K V, et al. V:YAG-a new passive Q-switch for diode-pumped solid-state lasers [J]. Appl. Phys. B, 1998, 67: 555-558.

    [8] Marling J. 1.05 ~1.44μm tunability and performance of the CW Nd3+:YAG laser [J]. IEEE J. of Quant. Electron.,1978, 14(1): 56-62.

    [9] Singh S, Smith R G, et al. Stimulated-emission cross section and fluorescent quantum efficiency of Nd3+ in yttrium aluminum garnet at room temperature [J]. Physics Review B, 1974, 10: 2566-2572.

    [10] Frauchiger J, Albers P, et al. Modeling of thermal lensing and higher order ring mode oscillation in end-pumped CW Nd:YAG laser [J]. IEEE J. Quant. Electron., 1992, 28(4): 1046-1056.

    [11] Shimony Y, Burshtein Z, Baranga A, et al. Repetitive Q-switching of a CW Nd:YAG laser using Cr4+:YAG saturable absorbers [J]. IEEE J. Quant. Electron., 1996, 32(2): 305-310.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. LD-pumped eye-safe Nd:YAG laser at 1.44μm[J]. Chinese Journal of Quantum Electronics, 2005, 22(4): 538
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