• Chinese Optics Letters
  • Vol. 19, Issue 3, 030001 (2021)
Le Jiang1, Xi Luo1, Zhongming Luo2, Dingjian Zhou1, Baoxing Liu2, Jincheng Huang2, Jianfeng Zhang2, Xulin Zhang2, Ping Xu2、*, and Guijun Li2、**
Author Affiliations
  • 1College of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, China
  • 2College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
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    DOI: 10.3788/COL202119.030001 Cite this Article Set citation alerts
    Le Jiang, Xi Luo, Zhongming Luo, Dingjian Zhou, Baoxing Liu, Jincheng Huang, Jianfeng Zhang, Xulin Zhang, Ping Xu, Guijun Li. Interface and bulk controlled perovskite nanocrystal growth for high brightness light-emitting diodes [Invited][J]. Chinese Optics Letters, 2021, 19(3): 030001 Copy Citation Text show less
    Structural and optical characteristics of CsPbBr3 perovskite films formed on the modified PEDOT:PSS with various ETA ratios. (a) Relative PL spectra and photos of different perovskite films under 400 nm illumination. (b) PLQY of PL. (c) XRD patterns. (d) XRD patterns of crystal orientation (200). (e) SEM images. (f) Grain size.
    Fig. 1. Structural and optical characteristics of CsPbBr3 perovskite films formed on the modified PEDOT:PSS with various ETA ratios. (a) Relative PL spectra and photos of different perovskite films under 400 nm illumination. (b) PLQY of PL. (c) XRD patterns. (d) XRD patterns of crystal orientation (200). (e) SEM images. (f) Grain size.
    Device performance of PeLEDs fabricated on ITO-glass with various ETA ratios in PEDOT:PSS. (a) Device structure of the PeLED. (b) EL spectrum for the PeLED with CsPbBr3 as the EML. (c) J-V and (d) L-V characteristics. (e) CE as a function of luminance. (f) EQE as a function of luminance.
    Fig. 2. Device performance of PeLEDs fabricated on ITO-glass with various ETA ratios in PEDOT:PSS. (a) Device structure of the PeLED. (b) EL spectrum for the PeLED with CsPbBr3 as the EML. (c) J-V and (d) L-V characteristics. (e) CE as a function of luminance. (f) EQE as a function of luminance.
    Structural and optical characteristics of CsPbBr3 perovskite films with various PEG ratios. (a) Relative PL spectra and photos of different perovskite films under 400 nm illumination. (b) PLQY of PL. (c) XRD patterns. (d) XRD patterns of crystal orientation (200). (e) SEM images. (f) Grain size.
    Fig. 3. Structural and optical characteristics of CsPbBr3 perovskite films with various PEG ratios. (a) Relative PL spectra and photos of different perovskite films under 400 nm illumination. (b) PLQY of PL. (c) XRD patterns. (d) XRD patterns of crystal orientation (200). (e) SEM images. (f) Grain size.
    (a) EL spectrum for the PeLED with PEG:CsPbBr3 as the EML. (b) The 1931 International Commission on Illumination (CIE) color coordinate. (c) J-V and (d) L-V characteristics. (e) CE as a function of luminance. (f) EQE as a function of luminance.
    Fig. 4. (a) EL spectrum for the PeLED with PEG:CsPbBr3 as the EML. (b) The 1931 International Commission on Illumination (CIE) color coordinate. (c) J-V and (d) L-V characteristics. (e) CE as a function of luminance. (f) EQE as a function of luminance.
    ETA Ratio (%)Luminance (cd/m2)/Voltage (V)CE (cd/A)EQE (%)/Voltage (V)
    0.06897/6.28.882.75/4.0
    0.214,037/6.211.994.45/5.0
    0.427,968/6.222.357.21/4.2
    0.620,198/6.016.725.84/4.2
    Table 1. Summary of the EL Performance of the PeLEDs with Different ETA Doping Concentrations
    PEG Concentration (mg/mL)Luminance (cd/m2)/Voltage (V)CE (cd/A)EQE (%)/Voltage (V)
    0.048,529/4.834.089.49/3.8
    10.055,736/5.639.0411.24/3.6
    20.064,756/5.445.5213.44/3.4
    30.046,554/5.827.168.17/4.0
    Table 2. EL Performance of the PeLEDs with Different PEG Concentrations in Perovskite-Emitting Layers
    Le Jiang, Xi Luo, Zhongming Luo, Dingjian Zhou, Baoxing Liu, Jincheng Huang, Jianfeng Zhang, Xulin Zhang, Ping Xu, Guijun Li. Interface and bulk controlled perovskite nanocrystal growth for high brightness light-emitting diodes [Invited][J]. Chinese Optics Letters, 2021, 19(3): 030001
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