Progress of optically pumped GaSb based semiconductor disk laser

Shili Shu; Guanyu Hou; Jian Feng; Lijie Wang; Sicong Tian; Cunzhu Tong; Lijun Wang

doi:10.29026/oea.2018.170003

[1] A A Nikitichev, A I Stepanov. 2-micrometer lasers for optical monitoring. J Opt Technol, 66, 718-723(1999).

[2] M P Mikhailova, A N Titkov. Type Ⅱ heterojunctions in the GaInAsSb/GaSb system. Semiconduct Sci Technol, 9, 1279-1295(1994).

[3] A N Baranov, Y Cuminal, G Boissier, J C Nicolas, J L Lazzari et al. Electroluminescence of GaInSb/GaSb strained single quantum well structures grown by molecular beam epitaxy. Semiconduct Sci Technol, 11, 1185-1188(1996).

[4] B W Tilma, M Mangold, C A Zaugg, S M Link, D Waldburger et al. Recent advances in ultrafast semiconductor disk lasers. Light: Sci Appl, 4, e310(2015).

[5] V M Korpijärvi, E L Kantola, T Leinonen, R Isoaho, M Guina. Monolithic GaInNAsSb/GaAs VECSEL operating at 1550 nm. IEEE J Sel Top Quantum Electron, 21, 1700705(2015).

[6] E Kantola, T Leinonen, S Ranta, M Tavast, J P Penttinen et al. 1180nm VECSEL with 50 W output power. Proc SPIE, 9349, 93490U(2015).

[7] E Kantola, T Leinonen, J P Penttinen, V M Korpijärvi, M Guina. 615 nm GaInNAs VECSEL with output power above 10 W. Opt Express, 23, 20280-20287(2015).

[8] J M Hopkins, N Hempler, B Rösener, N Schulz, M Rattunde et al. High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 μm. Opt Lett, 33, 201-203(2008).

[9] J Paajaste, S Suomalainen, R Koskinen, A Härkönen, M Guina et al. High-power and broadly tunable GaSb-based optically pumped VECSELs emitting near 2 μm. J Cryst Growth, 311, 1917-1919(2009).

[10] T Töpper, M Rattunde, S Kaspar, R Moser, C Manz et al. High-power 2.0 μm semiconductor disk laser—Influence of lateral lasing. Appl Phys Lett, 100, 192107(2012).

[11] L Cerutti, A Garnache, A Ouvrard, F Genty. High temperature continuous wave operation of Sb-based vertical external cavity surface emitting laser near 2.3 μm. J Cryst Growth, 268, 128-134(2004).

[12] L Cerutti, A Garnache, A Ouvrard, M Garcia, E Cerda et al. 2.36 μm diode pumped VCSEL operating at room temperature in continuous wave with circular TEM₀₀ output beam. Electron Lett, 40, 869-871(2004).

[13] J Paajaste, R Koskinen, J Nikkinen, S Suomalainen, O G Okhotnikov. Power scalable 2.5 μm (AlGaIn)(AsSb) semiconductor disk laser grown by molecular beam epitaxy. J Cryst Growth, 323, 454-456(2011).

[14] B Rösener, M Rattunde, R Moser, S Kaspar, C Manz et al. GaSb-based optically pumped semiconductor disk lasers emitting in the 2.0-2.8 μm wavelength range. Proc SPIE, 7578, 75780X(2010).

[15] B Rösener, M Rattunde, R Moser, S Kaspar, T Töpper et al. Continuous-wave room-temperature operation of a 2.8 μm GaSb-based semiconductor disk laser. Opt Lett, 36, 319-321(2011).

[16] P Holl, M Rattunde, S Adler, A Bächle, E Diwo-Emmer et al. GaSb-based 2.0 μm SDL with 17 W output power at 20℃. Electron Lett, 52, 1794-1795(2016).

[17] A Ouvrard, A Garnache, L Cerutti, F Genty, D Romanini. Single-frequency tunable sb-based VCSELs emitting at 2.3 μm. IEEE Photonics Technol Lett, 17, 2020-2022(2005).

[18] M Rattunde, N Schulz, C Ritzenthaler, B Rösener, C Manz et al. High brightness GaSb-based optically pumped semiconductor disk lasers at 2.3 μm. Proc SPIE, 6479, 647915(2007).

[19] B Rösener, N Schulz, M Rattunde, C Manz, K Kohler et al. High-power high-brightness operation of a 2.25-μm (AlGaIn)(AsSb)-based barrier-pumped vertical-external-cavity surface-emitting laser. IEEE Photonics Technol Lett, 20, 502-504(2008).

[20] B Rösener, M Rattunde, R Moser, C Manz, K Kohler et al. GaSb-based optically pumped semiconductor disk laser using multiple gain elements. IEEE Photonics Technol Lett, 21, 848-850(2009).

[21] P Holl, M Rattunde, S Adler, A Bächle, E Diwo-Emmer et al. Optimization of 2.5 μm VECSEL: influence of the QW active region. Proc SPIE, 9734, 97340S(2016).

[22] P Holl, M Rattunde, S Adler, K Scholle, S Lamrini et al. GaSb-based VECSEL for high-power applications and Ho-pumping. Proc SPIE, 10087, 1008705(2017).

[23] P Holl, M Rattunde, S Adler, S Kaspar, W Bronner et al. Recent advances in power scaling of GaSb-Based semiconductor disk lasers. IEEE J Sel Top Quantum Electron, 21, 1501012(2015).

[24] C Manz, Q K Yang, M Rattunde, N Schulz, B Rösener et al. Quaternary GaInAsSb/AlGaAsSb vertical-external-cavity surface-emitting lasers—A challenge for MBE growth. J Cryst Growth, 311, 1920-1922(2009).

[25] C Manz, Q Yang, K Köhler, M Maier, L Kirste et al. High-quality GaInAs/AlAsSb quantum cascade lasers grown by molecular beam epitaxy in continuous growth mode. J Cryst Growth, 280, 75-80(2005).

[26] C Manz, K Köhler, L Kirste, Q K Yang, B Rösener et al. Output power enhancement of 100% for quaternary GaInAsSb/ AlGaAsSb semiconductor disc lasers grown with a sequential growth scheme. J Cryst Growth, 311, 4158-4161(2009).

[27] R G Bedford, M Kolesik, J L A Chilla, M K Reed, T R Nelson et al. Power-limiting mechanisms in VECSELs. Proc SPIE, 5814, 199-208(2005).

[28] C Hessenius, M Fallahi, J Moloney, R Bedford. Lateral lasing and ASE reduction in VECSELs. Proc SPIE, 7919, 791909(2011).

[29] L Fan, M Fallahi, J Hader, A R Zakharian, J V Moloney et al. Multichip vertical-external-cavity surface-emitting lasers: a coherent power scaling scheme. Opt Lett, 31, 3612-3614(2006).

[30] E J Saarinen, A Härkönen, S Suomalainen, O G Okhotnikov. Power scalable semiconductor disk laser using multiple gain cavity. Opt Express, 14, 12868-12871(2006).

[31] L Cerutti, A Garnache, E Genty, A Ouvrard, C Alibert. Low threshold, room temperature laser diode pumped Sb-based VECSEL emitting around 2.1 μm. Electron Lett, 39, 290-292(2003).

[32] N Schulz, M Rattunde, C Manz, K Köhler, C Wild et al. GaSb-based VECSELs emitting at around 2.35 μm employing different optical pumping concepts. Proc SPIE, 6184, 61840S(2006).

[33] N Schulz, M Rattunde, C Ritzenthaler, B Rösener, C Manz et al. Resonant optical in-well pumping of an (AlGaIn)(AsSb)-based vertical-external-cavity surface-emitting laser emitting at 2.35 μm. Appl Phys Lett, 91, 091113(2007).

[34] J P Perez, A Laurain, L Cerutti, I Sagnes, A Garnache. Technologies for thermal management of mid-IR Sb-based surface emitting lasers. Semiconduct Sci Technol, 25, 045021(2010).

[35] M Devautour, A Michon, G Beaudoin, I Sagnes, L Cerutti et al. Thermal management for high-power single-frequency tunable diode-pumped VECSEL emitting in the near-and Mid-IR. IEEE J Sel Top Quantum Electron, 19, 1701108(2013).

[36] Z L Liau. Semiconductor wafer bonding via liquid capillarity. Appl Phys Lett, 77, 651-653(2000).

[37] S Kaspar, M Rattunde, C Schilling, S Adler, P Holl et al. Micro-cavity 2-μm GaSb-based semiconductor disk laser using high-reflectivity SiC heatspreader. Appl Phys Lett, 103, 041117(2013).

[38] N Schulz, M Rattunde, C Manz, K Köhler, C Wild et al. High power continuous wave operation of a GaSb-based VECSEL emitting near 2.3 μm. Phys Status Solidi C, 3, 386-390(2006).

[39] A Härkönen, M Guina, O Okhotnikov, K Rößner, M Hümmer et al. 1-W antimonide-based vertical external cavity surface emitting laser operating at 2-μm. Opt Express, 14, 6479-6484(2006).

[40] L Cerutti, A Garnache, A Ouvrard, M Garcia, F Genty. Vertical Cavity Surface Emitting Laser sources for gas detection. Phys stat solidi A, 202, 631-635(2005).

[41] J M Hopkins, A J Maclean, E Riis, N Schulz, M Rattunde et al. Tunable, single-frequency, diode-pumped 2.3 μm VECSEL. Opt Express, 15, 8212-8217(2007).

[42] S Kaspar, B Rösener, M Rattunde, T Topper, C Manz et al. Sub-MHz-linewidth 200-mW actively stabilized 2.3-μm semiconductor disk laser. IEEE Photonics Technol Lett, 23, 1538-1540(2011).

[43] B Rösener, S Kaspar, M Rattunde, T Töpper, C Manz et al. 2 μm Semiconductor disk laser with a heterodyne linewidth below 10 kHz. Opt Express, 36, 3587-3589(2011).

[44] S Kaspar, M Rattunde, T Töpper, C Manz, K Köhler et al. Semiconductor disk laser at 2.05 μm wavelength with < 100 kHz linewidth at 1 W output power. Appl Phys Lett,, 100, 031109(2012).

[45] S Kaspar, M Rattunde, T Töpper, B Rosener, C Manz et al. Linewidth narrowing and power scaling of single-frequency 2.X μm GaSb-based semiconductor disk lasers. IEEE J Quantum Electron, 49, 314-324(2013).

[46] S Kaspar, M Rattunde, T Töpper, R Moser, S Adler et al. Recent advances in 2-μm GaSb-Based semiconductor disk laser—power scaling, narrow-linewidth and short-pulse operation. IEEE J Sel Top Quantum Electron, 19, 1501908(2013).

[47] J H V Price, T M Monro, H Ebendorff-Heidepriem, F Poletti, P Horak et al. Mid-IR supercontinuum generation from nonsilica microstructured optical fibers. IEEE J Sel Top Quantum Electron, 13, 738-749(2007).

[48] J M Yarborough, Y Y Lai, Y Kaneda, J Hader, J V Moloney et al. Record pulsed power demonstration of a 2 μm GaSb-based optically pumped semiconductor laser grown lattice-mismatched on an AlAs/GaAs Bragg mirror and substrate. Appl Phys Lett, 95, 081112(2009).

[49] Y Y Lai, J M Yarborough, Y Kaneda, J Hader, J V Moloney et al. 340-W peak power from a GaSb 2-μm optically pumped semiconductor laser (OPSL) grown mismatched on GaAs. IEEE Photonics Technol Lett, 22, 1253-1255(2010).

[50] A Härkönen, J Paajaste, S Suomalainen, J P Alanko, C Grebing et al. Picosecond passively mode-locked GaSb-based semiconductor disk laser operating at 2μm. Opt Lett, 35, 4090-4092(2010).

[51] A Härkönen, C Grebing, J Paajaste, R Koskinen, J P Alanko et al. Modelocked GaSb disk laser producing 384 fs pulses at 2 μm wavelength. Electron Lett, 47, 454-456(2011).

[52] S Kaspar, M Rattunde, T Töpper, U T Schwarz, C Manz et al. Electro-optically cavity dumped 2 μm semiconductor disk laser emitting 3 ns pulses of 30 W peak power. Appl Phys Lett, 101, 141121(2012).

[53] L Shterengas, G Belenky, T Hosoda, G Kipshidze, S Suchalkin. Continuous wave operation of diode lasers at 3.36 μm at 12 ℃. Appl Phys Lett, 93, 011103(2008).

[54] T Hosoda, G Kipshidze, L Shterengas, G Belenky. Diode lasers emitting near 3.44 μm in continuous-wave regime at 300K. Electron Lett, 46, 1455-1457(2010).

[55] A J Kemp, G J Valentine, J M Hopkins, J E Hastie, S A Smit et al. Thermal management in vertical-external-cavity surface-emitting lasers: finite-element analysis of a heatspreader approach. IEEE J Quantum Electron, 41, 148-155(2005).

微信扫一扫：分享

微信扫一扫：分享