Fig. 1. Schematic of typical SDL cavity

Fig. 2. The output power curves of GaSb based SDL emission at 2.0 μm with different pump spot diameters. Figure reproduced from ref. ¹⁶, the Institution of Engineering & Technology.

Fig. 3. Maximum output power of GaSb based SDLs emission at different wavelength operation at 20 ℃.

Fig. 4. Power characteristic of the GaSb based SDL chips with patterned side facets and with cleaved side facets pumped by two different pump spot sizes. Figure reproduced from ref. ¹⁰, AIP Publishing.

Fig. 5. Output power of the GaSb based SDLs by using the two gain element structures at heat sink temperature of 20 ℃ with different reflectivity of the output coupling (OC) mirror. Figure reproduced from ref. ²⁰, IEEE.

Fig. 6. Schematic representations of the two main thermal management methods. (a) Substrate removing; (b) Intracavity heat spreader.

Fig. 7. 2.0 μm GaSb based SDL with narrow line-width singlefrequency emission. Figure reproduced from ref. ⁴⁶, IEEE.

Fig. 8. (a) Optical spectrum together with sech2 fit; (b) Measured interferometric autocorrelation; (c) Intensity autocorrelation retrieved from interferometric autocorrelation data and intensity autocorrelation of bandwidth limited pulse computed from spectrum in Fig. 9(a); (d) Pulse shape and Fourier transform limit. Figure reproduced from ref. ⁵¹, the Institution of Engineering & Technology.

Fig. 9. Experimental setup and optical measurement arrangement. Figure reproduced from ref. ⁵¹, the Institution of Engineering & Technology.

Table 1. Heterostructures for GaSb-based SDLs emitting at the range of 2.0~2.8 μm