Fangyuan Lu, Xingbin Yan, Wei Lin, Zhiwei Zheng. Control of Goos-Hänchen Shift Based on Graphene/Hexagonal Boron Nitride Heterostructure[J]. Laser & Optoelectronics Progress, 2020, 57(13): 131601
- Laser & Optoelectronics Progress
- Vol. 57, Issue 13, 131601 (2020)
Fig. 1. Graphene-hBN heterostructure
Fig. 2. Dielectric constant of hBN and reflectance of structure with different wavelengths. (a) Real and imaginary parts of dielectric constant of hBN; (b) reflectance
Fig. 3. Variation in reflectance, reflection phase and GH shift with incident angle under the different Ef. (a) Reflectance; (b) reflection phase; (c) GH shift
Fig. 4. Variation in reflectance, reflection phase and GH shift with incident angle under the number of graphene layers. (a) Reflectance; (b) reflection phase; (c) GH shift
Fig. 5. Two-dimensional pseudo-color distribution diagram plot of GH shift versus incident angle and thickness of hBN. (a) d=1.20~1.53 μm; (b) d=1.54~1.80 μm
Fig. 6. Variation curve of GH shift with hBN thickness
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