High-Speed and Low-Insertion-Loss Silicon Waveguide Phase Shifter Based on High Mobility Transparent Conductive Oxides

Lixia Nie; Yan Zhang; Shilin Xian; Jun Qin; Huili Wang; Lei Bi

doi:10.3788/LOP56.152302

[1] Soref R. The past, present, and future of silicon photonics[J]. IEEE Journal of Selected Topics in Quantum Electronics, 12, 1678-1687(2006). http://ieeexplore.ieee.org/document/4032698

[2] Liu A S, Jones R, Liao L et al. A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor[J]. Nature, 427, 615-618(2004). http://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=VIRT01000009000007000075000001&idtype=cvips&gifs=Yes

[3] Subbaraman H, Xu X C, Hosseini A et al. Recent advances in silicon-based passive and active optical interconnects[J]. Optics Express, 23, 2487-2511(2015). http://www.ncbi.nlm.nih.gov/pubmed/25836116

[4] Zhuang D W, Han X C, Li Y X et al. Silicon-based optoelectronic integrated optical phased array[J]. Laser & Optoelectronics Progress, 55, 050001(2018).

[5] Chmielak B, Waldow M, Matheisen C et al. Pockels effect based fully integrated, strained silicon electro-optic modulator[J]. Optics Express, 19, 17212-17219(2011). http://europepmc.org/abstract/MED/21935084

[6] Liang F C, Li M, Wu D M. Optimized design of low driving and high modulation X-cut LiNbO3 electro-optical modulator[J]. Acta Optica Sinica, 38, 0713001(2018).

[7] Rao A, Patil A, Malinowski M et al. Electro-optic and second-order nonlinear effects in thin film lithium niobate on silicon. [C]∥2017 IEEE Photonics Society Summer Topical Meeting Series (SUM), July 10-12, 2017,San Juan, Puerto Rico. New York: IEEE, 151-152(2017).

[8] Green W M J, Rooks M J, Sekaric L et al. . Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator[J]. Optics Express, 15, 17106-17113(2007). http://www.opticsinfobase.org/abstract.cfm?id=148351

[9] Feng N N, Liao S R, Feng D Z et al. High speed carrier-depletion modulators with 1.4 V-cm VπL integrated on 0.25 μm silicon-on-insulator waveguides[J]. Optics Express, 18, 7994-7999(2010). http://www.opticsinfobase.org/abstract.cfm?id=197002

[10] Soref R, Bennett B. Electrooptical effects in silicon[J]. IEEE Journal of Quantum Electronics, 23, 123-129(1987). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=1073206

[11] Yaacobi A, Sun J, Moresco M et al. Integrated phased array for wide-angle beam steering[J]. Optics Letters, 39, 4575-4578(2014). http://www.ncbi.nlm.nih.gov/pubmed/25078232

[12] Coutts T J, Young D L, Li X N. Characterization of transparent conducting oxides[J]. MRS Bulletin, 25, 58-65(2000).

[13] Kim J, Naik G V, Emani N K et al. Plasmonic resonances in nanostructured transparent conducting oxide films[J]. IEEE Journal of Selected Topics in Quantum Electronics, 19, 4601907(2013). http://ieeexplore.ieee.org/document/6415973/

[14] Walsh A, Wei S H. Multi-component transparent conducting oxides: progress in materials modelling[J]. Journal of Physics: Condensed Matter, 23, 334210(2011). http://www.ncbi.nlm.nih.gov/pubmed/21813942

[15] Sorger V J. Lanzillotti-Kimura N D, Ma R M, et al. Ultra-compact silicon nanophotonic modulator with broadband response[J]. Nanophotonics, 1, 17-22(2012).

[16] Yi F, Shim E, Zhu A Y et al. Voltage tuning of plasmonic absorbers by indium tin oxide[J]. Applied Physics Letters, 102, 221102(2013). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6523004

[17] Baek J, You J B, Yu K. Free-carrier electro-refraction modulation based on a silicon slot waveguide with ITO[J]. Optics Express, 23, 15863-15876(2015). http://europepmc.org/abstract/MED/26193565

[18] Sinatkas G, Pitilakis A, Zografopoulos D C et al. Transparent conducting oxide electro-optic modulators on silicon platforms: a comprehensive study based on the drift-diffusion semiconductor model[J]. Journal of Applied Physics, 121, 023109(2017). http://adsabs.harvard.edu/abs/2017JAP...121b3109S

[19] Feigenbaum E, Diest K, Atwater H A. Unity-order index change in transparent conducting oxides at visible frequencies[J]. Nano Letters, 10, 2111-2116(2010). http://europepmc.org/abstract/MED/20481480

[20] Cai X Y, Wang X W, Li R X et al. Controllable modulation of surface plasmon resonance wavelength of ITO thin films[J]. Laser & Optoelectronics Progress, 55, 051602(2018).

[21] Fardad S, Ramos E A, Salandrino A. Accumulation-layer surface plasmons in transparent conductive oxides[J]. Optics Letters, 42, 2038-2041(2017). http://www.ncbi.nlm.nih.gov/pubmed/28504743

[22] Yan M, Lane M, Kannewurf C R et al. Highly conductive epitaxial CdO thin films prepared by pulsed laser deposition[J]. Applied Physics Letters, 78, 2342-2344(2001). http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=4896306

[23] Koffyberg F P. Electron concentration and mobility in semimetallic CdO[J]. Canadian Journal of Physics, 49, 435-440(1971). http://www.nrcresearchpress.com/doi/abs/10.1139/p71-055

[24] van Daal H J. The static dielectric constant of SnO2[J]. Journal of Applied Physics, 39, 4467-4469(1968). http://scitation.aip.org/content/aip/journal/jap/39/9/10.1063/1.1656998

[25] Ellmer K, Mientus R. Carrier transport in polycrystalline transparent conductive oxides: a comparative study of zinc oxide and indium oxide[J]. Thin Solid Films, 516, 4620-4627(2008). http://www.sciencedirect.com/science/article/pii/S0040609007009133

[26] Calnan S, Tiwari A N. High mobility transparent conducting oxides for thin film solar cells[J]. Thin Solid Films, 518, 1839-1849(2010). http://www.sciencedirect.com/science/article/pii/S0040609009014916

[27] Wood M G, Campione S, Serkland D K et al. High-mobility transparent conducting oxides for compact epsilon-near-zero silicon integrated optical modulators. [C]∥Frontiers in Optics 2017, September 18-21, 2017, Washington, D.C., United States. Washington, D.C.: OSA, JW3A, 46(2007).

[28] Sachet E, Shelton C T, Harris J S et al. Dysprosium-doped cadmium oxide as a gateway material for mid-infrared plasmonics[J]. Nature Materials, 14, 414-420(2015). http://europepmc.org/abstract/med/25686264

[29] Exarhos G J, Zhou X D. Discovery-based design of transparent conducting oxide films[J]. Thin Solid Films, 515, 7025-7052(2007). http://www.sciencedirect.com/science/article/pii/S0040609007003173

[30] Koida T, Fujiwara H, Kondo M. Structural and electrical properties of hydrogen-doped In2O3 films fabricated by solid-phase crystallization[J]. Journal of Non-Crystalline Solids, 354, 2805-2808(2008).

[31] Coutts T J, Young D L, Li X et al. Search for improved transparent conducting oxides: a fundamental investigation of CdO, Cd2SnO4, and Zn2SnO4[J]. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 18, 2646-2660(2000).

[32] Babicheva V E, Boltasseva A, Lavrinenko A V. Transparent conducting oxides for electro-optical plasmonic modulators[J]. Nanophotonics, 4, 165-185(2015). http://adsabs.harvard.edu/abs/2015Nanop...4....4B

[33] Wang J T, Zhou L J, Zhu H K et al. Silicon high-speed binary phase-shift keying modulator with a single-drive push-pull high-speed traveling wave electrode[J]. Photonics Research, 3, 58-62(2015). http://www.opticsjournal.net/Articles/Abstract?aid=OJ160106000203Yu2x4A

[34] Han J H, Boeuf F, Fujikata J et al. Efficient low-loss InGaAsP/Si hybrid MOS optical modulator[J]. Nature Photonics, 11, 486-490(2017). http://www.nature.com/nphoton/journal/v11/n8/nphoton.2017.122/metrics

[35] Harris N C, Ma Y J, Mower J et al. Efficient, compact and low loss thermo-optic phase shifter in silicon[J]. Optics Express, 22, 10487-10493(2014). http://www.ncbi.nlm.nih.gov/pubmed/24921750

[36] Lu Z L, Zhao W S, Shi K F. Ultracompact electroabsorption modulators based on tunable epsilon-near-zero-slot waveguides[J]. IEEE Photonics Journal, 4, 735-740(2012). http://ieeexplore.ieee.org/document/6194256/