High-Speed and Low-Insertion-Loss Silicon Waveguide Phase Shifter Based on High Mobility Transparent Conductive Oxides

Lixia Nie; Yan Zhang; Shilin Xian; Jun Qin; Huili Wang; Lei Bi

doi:10.3788/LOP56.152302

Journals >Laser & Optoelectronics Progress >Volume 56 >Issue 15 >Page 152302 > Article

Laser & Optoelectronics Progress
Vol. 56, Issue 15, 152302 (2019)

High-Speed and Low-Insertion-Loss Silicon Waveguide Phase Shifter Based on High Mobility Transparent Conductive Oxides

Lixia Nie^1、2, Yan Zhang^1、2, Shilin Xian^1、2, Jun Qin^1、2, Huili Wang^1、2, and Lei Bi^1、2、*

Author Affiliations

¹ National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, China

² School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, Sichuan 611731, China

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DOI: 10.3788/LOP56.152302 Cite this Article Set citation alerts

Lixia Nie, Yan Zhang, Shilin Xian, Jun Qin, Huili Wang, Lei Bi. High-Speed and Low-Insertion-Loss Silicon Waveguide Phase Shifter Based on High Mobility Transparent Conductive Oxides[J]. Laser & Optoelectronics Progress, 2019, 56(15): 152302 Copy Citation Text

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