• Advanced Photonics
  • Vol. 3, Issue 5, 054001 (2021)
Stefania Castelletto1、* and Alberto Boretti2
Author Affiliations
  • 1RMIT University, School of Engineering, Bundoora, Australia
  • 2Prince Mohammad Bin Fahd University, Deanship of Research, Al Khobar, Saudi Arabia
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    DOI: 10.1117/1.AP.3.5.054001 Cite this Article Set citation alerts
    Stefania Castelletto, Alberto Boretti. Color centers in wide-bandgap semiconductors for subdiffraction imaging: a review[J]. Advanced Photonics, 2021, 3(5): 054001 Copy Citation Text show less

    Abstract

    Solid-state atomic-sized color centers in wide-band-gap semiconductors, such as diamond, silicon carbide, and hexagonal boron nitride, are important platforms for quantum technologies, specifically for single-photon sources and quantum sensing. One of the emerging applications of these quantum emitters is subdiffraction imaging. This capability is provided by the specific photophysical properties of color centers, such as high dipole moments, photostability, and a variety of spectral ranges of the emitters with associated optical and microwave control of their quantum states. We review applications of color centers in traditional super-resolution microscopy and quantum imaging methods, and compare relative performance. The current state and perspectives of their applications in biomedical, chemistry, and material science imaging are outlined.
    dλSTED2×NA×(1+aImax/Is)50  nm,

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    dλ2×NA×1+ΓτD,

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    ΔlocΔN,

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    Stefania Castelletto, Alberto Boretti. Color centers in wide-bandgap semiconductors for subdiffraction imaging: a review[J]. Advanced Photonics, 2021, 3(5): 054001
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