The material growth, device fabrication and performance of integrated MW1/MW2 two-color HgCdTe infrared detector was reported. A four-layer p-p-P-N hetero-junction Hg 1-xCd xTe film was grown in-situ by molecular beam epitaxy technology. The preliminary eighty unit cells two-color HgCdTe infrared detector was obtained by B +-implantation, mesa etching, side-wall metallization, side-wall passivation and hybridization. The independent electrical assess to each of two spatially collated back-to-back HgCdTe photodiodes allows the photocurrents of shorter and longer wavelength to be separated, and ensures the spatial uniformity and temporal simultaneity. It was operated in the backside-illuminated mode with infrared radiation incidence on the substrate surface, and with large fill-factor. At liquid nitrogen temperature, the cut-off wavelengths of the two bands are 3.04μm and 5.74μm individually, the zero-bias dynamic resistance (R 0A) products of them are 3.852×10 5Ωcm 2and 3.015×10 2Ωcm 2,the peak detectivities D_λp* are 1.571.57×1011cmHz1/2/W和5.63×1010cmHz1/2/W respectively.Two-band spectral response was obtained.The spetral crosstalk of MW1 photodiode is 6.34% and that MW2 photodiode is 0.46%.