Jie-Yu Li, Yang Wang, Dan-Dan Jia, Wei-Peng Wei, Peng Dong. New embedded DDSCR structure with high holding voltage and high robustness for 12-V applications[J]. Chinese Physics B, 2020, 29(10):
- Chinese Physics B
- Vol. 29, Issue 10, (2020)
Fig. 1. Cross-section view of 2-finger DDSCR of (a) MDDSCR, (b) EMDDSCR, and (c) NPEMDDSCR.
Fig. 2. Equivalent circuit of 2-finger DDSCR of (a) MDDSCR, (b) EMDDSCR, and (c) NPEMDDSCR.
Fig. 3. TCAD simulated cross section of (a) MDDSCR, (b) EMDDSCR, and (c) NPEMDDSCR.
Fig. 4. Total current-flow-line at (a) the trigger point, (b) the holding point, and (c) the high ESD current pulse. In the legends of the figure, Si3N4 and SiO2 symbolize Si3N4 and SiO2 respectively. Number 3.43e + 04 equals to 3.43 × 104.
Fig. 5. Impact ionization of (a) MDDSCR, (b) EMDDSCR, and (c) NPEMDDSCR.
Fig. 6. Comparisons of TLP characteristic among MDDSCR, EMDDSCR, and NPEMDDSCR.
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Table 1. TLP data for MDDSCR, EMDDSCR, and NPEMDDSCR.
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