[1] D Ielmini. Brain-inspired computing with resistive switching memory (RRAM): Devices, synapses and neural networks. Microelectron Eng, 190, 44(2018).

[2] T V P Bliss, G L Collingridge. A synaptic model of memory: long-term potentiation in the hippocampus. Nature, 361, 31(1993).

[3] L Chua. Resistance switching memories are memristors. Appl Phys A, 102, 765(2011).

[4] P Yao, H Wu, B Gao et al. Fully hardware-implemented memristor convolutional neural network. Nature, 577, 641(2020).

[5] F Cai, J M Correll, S H Lee et al. A fully integrated reprogrammable memristor–CMOS system for efficient multiply-accumulate operations. Nat Electron, 2, 290(2019).

[6] W H Qian, X F Cheng, J Zhou et al. Lead-free perovskite MASnBr₃-based memristor for quaternary information storage. InfoMat(2019).

[7] Y Pang, B Gao, B Lin et al. Memristors for hardware security applications. Adv Electron Mater, 5, 1800872(2019).

[8] X Chen, Y Zhou, V A L Roy et al. Evolutionary metal oxide clusters for novel applications: toward high-density data storage in nonvolatile memories. Adv Mater, 30, 1703950(2018).

[9] Z H Tan, R Yang, K Terabe et al. Synaptic metaplasticity realized in oxide memristive devices. Adv Mater, 28, 377(2016).

[10] S T Han, Y Zhou, V A L Roy. Towards the development of flexible non-volatile memories. Adv Mater, 25, 5425(2013).

[11] S Yoo, T Eom, T Gwon et al. Bipolar resistive switching behavior of an amorphous Ge₂Sb₂Te₅ thin films with a Te layer. Nanoscale, 7, 6340(2015).

[12] C Gu, J S Lee. Flexible hybrid organic-inorganic perovskite memory. ACS nano, 10, 5413(2016).

[13] H Tian, L Zhao, X Wang et al. Extremely low operating current resistive memory based on exfoliated 2D perovskite single crystals for neuromorphic computing. ACS Nano, 11, 12247(2017).

[14] F Zhou, Y Liu, X Shen et al. Low-voltage, optoelectronic CH₃NH₃PbI_3–xCl_x memory with integrated sensing and logic operations. Adv Funct Mater, 28, 1800080(2018).

[15] S D Stranks, H J Snaith. Metal-halide perovskites for photovoltaic and light-emitting devices. Nat Nanotechnol, 10, 391(2015).

[16] Q Chen, N De Marco, Y M Yang et al. Under the spotlight: The organic-inorganic hybrid halide perovskite for optoelectronic applications. Nano Today, 10, 355(2015).

[17] Q Dong, Y Fang, Y Shao et al. Electron-hole diffusion lengths > 175 μm in solution-grown CH₃NH₃PbI₃ single crystals. Science, 347, 967(2015).

[18] M M Lee, J Teuscher, T Miyasaka et al. Efficient hybrid solar cells based on meso-superstructure organometal halide perovskites. Science, 338, 643(2012).

[19] Y Fang, Q Dong, Y Shao et al. Highly narrowband perovskite single-crystal photodetectors enabled by surface-charge recombination. Nat Photonics, 9, 679(2015).

[20] D Shi, V Adinolfi, R Comin et al. Low trap-state density and long carrier diffusion in organolead trihalide perovskite single crystals. Science, 347, 519(2015).

[21] F Li, H Wang, D Kufer et al. Ultrahigh carrier mobility achieved in photoresponsive hybrid perovskite films via coupling with single-walled carbon nanotubes. Adv Mater, 29, 1602432(2017).

[22] B Anand, S Sampat, E O Danilov et al. Broadband transient absorption study of photoexcitations in lead halide perovskites: Towards a multiband picture. Phys Rev B, 93, 161205(2016).

[23] Z K Tan, R S Moghaddam, M L Lai et al. Bright light-emitting diodes based on organometal halide perovskite. Nat Nanotechnol, 9, 687(2014).

[24] S P Senanayak, B Yang, T H Thomas et al. Understanding charge transport in lead iodide perovskite thin-film field-effect transistors. Sci Adv, 3, e1601935(2017).

[25] K Wang, C Wu, D Yang et al. Quasi-two-dimensional halide perovskite single crystal photodetector. ACS Nano, 12, 4919(2018).

[26] T Y Yang, G Gregori, N Pellet et al. The significance of ion conduction in a hybrid organic-inorganic lead-iodide-based perovskite photosensitizer. Angew Chem Int Ed, 54, 7905(2015).

[27] J Haruyama, K Sodeyama, L Han et al. First-principles study of ion diffusion in perovskite solar cell sensitizers. J Am Chem Soc, 137, 10048(2015).

[28] L Chua. Memristor-the missing circuit element. IEEE Trans Circuit Theory, 18, 507(1971).

[29] D B Strukov, G S Snider, D R Stewart et al. The missing memristor found. Nature, 453, 80(2008).

[30] J H Yoon, J Zhang, X Ren et al. Truly electroforming-free and low-energy memristors with preconditioned conductive tunneling paths. Adv Funct Mater, 27, 1702010(2017).

[31] D Ielmini, H S P Wong. In-memory computing with resistive switching devices. Nat Electron, 1, 333(2018).

[32] Z Xiao, Y Yuan, Y Shao et al. Giant switchable photovoltaic effect in organometal trihalide perovskite devices. Nat Mater, 14, 193(2015).

[33] J Xu, X Zhao, Z Wang et al. Biodegradable natural pectin-based flexible multilevel resistive switching memory for transient electronics. Small, 15, 1803970(2019).

[34] X Yan, K Wang, J Zhao et al. A new memristor with 2D Ti₃C₂T_x MXene flakes as an artificial bio-synapse. Small, 15, 1900107(2019).

[35] F Yu, L Zhu, H Xiao et al. Restickable oxide neuromorphic transistors with spike-timing-dependent plasticity and pavlovian associative learning activities. Adv Funct Mater, 28, 1804025(2018).

[36] X Yan, X Li, Z Zhou et al. Flexible transparent organic artificial synapse based on the tungsten/egg albumen/indium tin oxide/polyethylene terephthalate memristor. ACS Appl Mater Interfaces, 11, 18654(2019).

[37] X Yan, Q Zhao, A P Chen et al. Vacancy-induced synaptic behavior in 2D WS₂ nanosheet-based memristor for low-power neuromorphic computing. Small, 15, 1901423(2019).

[38] S Choi, S H Tan, Z Li et al. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations. Nat Mater, 17, 335(2018).

[39] X Yan, J Zhao, S Liu et al. Memristor with Ag-cluster-doped TiO₂ films as artificial synapse for Neuroinspired computing. Adv Funct Mater, 28, 1705320(2018).

[40] X Zhu, D Li, X Liang et al. Ionic modulation and ionic coupling effects in MoS₂ devices for neuromorphic computing. Nat Mater, 18, 141(2019).

[41] R Muenstermann, T Menke, R Dittmann et al. Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO₃ thin-film memristive devices. Adv Mater, 22, 4819(2010).

[42] H Y Jeong, J Y Lee, S Y Choi. Interface-engineered amorphous TiO₂-based resistive memory devices. Adv Funct Mater, 20, 3912(2010).

[43] Y Yang, R Huang. Probing memristive switching in nanoionic devices. Nat Electron, 1, 274(2018).

[44] F Budiman, D G O Hernowo, R R Pandey et al. Recent progress on fabrication of memristor and transistor-based neuromorphic devices for high signal processing speed with low power consumption. Jpn J Appl Phys, 57, 03EA06(2018).

[45] J Y Chen, C W Huang, C H Chiu et al. Switching kinetic of VCM-based memristor: evolution and positioning of nanofilament. Adv Mater, 27, 5028(2015).

[46] Q Liu, J Sun, H Lv et al. Real-time observation on dynamic growth/dissolution of conductive filaments in oxide-electrolyte based ReRAM. Adv Mater, 24, 1844(2012).

[47] Y Yang, P Gao, L Li et al. Electrochemical dynamics of nanoscale metallic inclusions in dielectrics. Nat Commun, 5, 1(2014).

[48] Y Yang, J Lee, S Lee et al. Oxide resistive memory with functionalized graphene as built-in selector element. Adv Mater, 26, 3693(2014).

[49] S Kim, S H Choi, W Lu. Comprehensive physical model of dynamic resistive switching in an oxide memristor. ACS Nano, 8, 2369(2014).

[50] W Xue, G Liu, Z Zhong et al. A 1D vanadium dioxide nanochannel constructed via electric-field-induced ion transport and its superior metal-insulator transition. Adv Mater, 29, 1702162(2017).

[51] Z Q Wang, H Y Xu, X H Li et al. Memristors: synaptic learning and memory functions achieved using oxygen ion migration/diffusion in an amorphous InGaZnO Memristor. Adv Funct Mater, 22, 2758(2012).

[52] C F Chang, J Y Chen, C W Huang et al. Direct observation of dual-filament switching behaviors in Ta₂O₅-based memristors. Small, 13, 1603116(2017).

[53] X Yan, Z Zhou, B Ding et al. Superior resistive switching memory and biological synapse properties based on a simple TiN/SiO₂/p-Si tunneling junction structure. J Mater Chem C, 5, 2259(2017).

[54] S Gao, G Liu, H Yang et al. An oxide Schottky junction artificial optoelectronic synapse. ACS Nano, 13, 2634(2019).

[55] H Tan, G Liu, X Zhu et al. An optoelectronic resistive switching memory with integrated demodulating and arithmetic functions. Adv Mater, 27, 2797(2015).

[56] E L Murphy, R H Jr Good. Thermionic emission, field emission, and the transition region. Phys Rev, 102, 1464(1956).

[57] P R Emtage, W Tantraporn. Schottky emission through thin insulating films. Phys Rev Lett, 8, 267(1962).

[58] J G Simmons. Electric tunnel effect between dissimilar electrodes separated by a thin insulating film. J Appl Phys, 34, 2581(1963).

[59] C Svensson, I Lundström. Trap-assisted charge injection in MNOS structures. J Appl Phys, 44, 4657(1973).

[60] Y Ma, S Wang, L Zheng et al. Recent research developments of perovskite solar cells. Chin J Chem, 32, 957(2014).

[61] Z Shi, J Guo, Y Chen et al. Lead-free organic-inorganic hybrid Perovskites for photovoltaic applications: recent advances and perspectives. Adv Mater, 29, 1605005(2017).

[62] A Miyata, A Mitioglu, P Plochocka et al. Direct measurement of the exciton binding energy and effective masses for charge carriers in organic-inorganic tri-halide perovskites. Nat Phys, 11, 582(2015).

[63] C C Stoumpos, M G Kanatzidis. Halide perovskites: poor man's high-performance semiconductors. Adv Mater, 28, 5778(2016).

[64] J S Yao, J Ge, B N Han et al. Ce³⁺-doping to modulate photoluminescence kinetics for efficient CsPbBr₃ nanocrystals-based light-emitting diodes. J Am Chem Soc, 140, 3626(2018).

[65] A Swarnkar, V K Ravi, A Nag. Beyond colloidal cesium lead halide perovskite nanocrystals: analogous metal halides and doping. ACS Energy Lett, 2, 1089(2017).

[66] J Liang, J Liu, Z Jin. All-inorganic halide perovskites for optoelectronics: progress and prospects. Sol RRL, 1, 1700086(2017).

[67] E J Yoo, M Lyu, J H Yun et al. Resistive switching behavior in organic-inorganic hybrid CH₃NH₃PbI_3–xCl_x perovskite for resistive random-access memory devices. Adv Mater, 27, 6170(2015).

[68] H Wang, D H Kim. Perovskite-based photodetectors: materials and devices. Chem Soc Rev, 46, 5204(2017).

[69] J Zhou, J Huang. Photodetectors based on organic-inorganic hybrid lead halide perovskites. Adv Sci, 5, 1700256(2018).

[70] J Choi, J S Han, K Hong et al. Organic–inorganic hybrid halide perovskites for memories, transistors, and artificial synapses. Adv Mater, 30, 1704002(2018).

[71] W Tress. Metal halide perovskites as mixed electronic-ionic conductors: challenges and opportunities from hysteresis to memristivity. J Phys Chem Lett, 8, 3106(2017).

[72] Z Ma, F Li, G Qi et al. Structural stability and optical properties of two-dimensional perovskite-like CsPb₂Br₅ microplates in response to pressure. Nanoscale, 11, 820(2019).

[73] G Xing, N Mathews, S Sun et al. Long-range balanced electron- and hole-transport lengths in organic–inorganic CH₃NH₃PbI₃. Science, 342, 344(2013).

[74] M C Weidman, M Seitz, S D Stranks et al. Highly tunable colloidal perovskite nanoplatelets through variable cation, metal, and halide composition. ACS Nano, 10, 7830(2016).

[75] C Cuhadar, S G Kim, J M Yang et al. All-inorganic bismuth halide perovskite-like materials A₃Bi₂I₉ and A₃Bi_1.8Na_0.2I_8.6 (A = Rb and Cs) for low-voltage switching resistive memory. ACS Appl Mater Interfaces, 10, 29741(2018).

[76] P Acharyya, P Pal, P K Samanta et al. Single pot synthesis of indirect band gap 2D CsPb₂Br₅ nanosheets from direct band gap 3D CsPbBr₃ nanocrystals and the origin of their luminescence properties. Nanoscale, 11, 4001(2019).

[77]

[78] C Li, S Tscheuschner, F Paulus et al. Iodine migration and its effect on hysteresis in perovskite solar cells. Adv Mater, 28, 2446(2016).

[79] K Leng, I Abdelwahab, I Verzhbitskiy et al. Molecularly thin two-dimensional hybrid perovskites with tunable optoelectronic properties due to reversible surface relaxation. Nat Mater, 17, 908(2018).

[80] L Qian, Y Sun, M Wu et al. A lead-free two-dimensional perovskite for a high-performance flexible photoconductor and a light-stimulated synaptic device. Nanoscale, 10, 6837(2018).

[81] M Prezioso, F Merrikh-Bayat, B D Hoskins et al. Training and operation of an integrated neuromorphic network based on metal–oxide memristors. Nature, 521, 61(2015).

[82] S J Liu, Z H Lin, Q Zhao et al. Flash-memory effect for polyfluorenes with on-chain iridium (III) complexes. Adv Funct Mater, 21, 979(2011).

[83] L Zhao, K Wang, W Wei et al. High-performance flexible sensing devices based on polyaniline/MXene nanocomposites. InfoMat, 1, 407(2019).

[84] G Lin, Y Lin, R Cui et al. An organic-inorganic hybrid perovskite logic gate for better computing. J Mater Chem C, 3, 10793(2015).

[85] K Yan, M Peng, X Yu et al. High-performance perovskite memristor based on methyl ammonium lead halides. J Mater Chem C, 4, 1375(2016).

[86] J M Yang, E S Choi, S Y Kim et al. Perovskite-related (CH₃NH₃)₃Sb₂Br₉ for forming-free memristor and low-energy-consuming neuromorphic computing. Nanoscale, 11, 6453(2019).

[87] J Choi, S Park, J Lee et al. Organolead halide perovskites for low operating voltage multilevel resistive switching. Adv Mater, 28, 6562(2016).

[88] J M Yang, S G Kim, J Y Seo et al. 1D hexagonal HC(NH₂)₂PbI₃ for multilevel resistive switching nonvolatile memory. Adv Electron Mater, 4, 1800190(2018).

[89] W Wang, J Xu, H Ma et al. Insertion of nanoscale AgInSbTe layer between the Ag electrode and the CH₃NH₃PbI₃ electrolyte layer enabling enhanced multilevel memory. ACS Appl Nano Mater, 2, 307(2019).

[90] X Guan, W Hu, M A Haque et al. Light-responsive ion-redistribution-induced resistive switching in hybrid perovskite Schottky junctions. Adv Funct Mater, 28, 1704665(2018).

[91] B Hwang, J S Lee. A strategy to design high-density nanoscale devices utilizing vapor deposition of metal halide perovskite materials. Adv Mater, 29, 1701048(2017).

[92] X Zhu, J Lee, W D Lu. Iodine vacancy redistribution in organic–inorganic halide perovskite films and resistive switching effects. Adv Mater, 29, 1700527(2017).

[93] C C Lin, B C Tu, C H Lin et al. Resistive switching mechanisms of V-doped SrZrO₃ memory films. IEEE Electron Device Lett, 27, 725(2006).

[94] E Yoo, M Lyu, J H Yun et al. Bifunctional resistive switching behavior in an organolead halide perovskite-based Ag/CH₃NH₃PbI_3–xCl_x/FTO structure. J Mater Chem C, 4, 7824(2016).

[95] Z Xiao, J Huang. Energy-efficient hybrid perovskite memristors and synaptic devices. Adv Electron Mater, 2, 1600100(2016).

[96] X Yan, L Zhang, H Chen et al. Graphene oxide quantum dots based memristors with progressive conduction tuning for artificial synaptic learning. Adv Funct Mater, 28, 1803728(2018).

[97] X Yan, Y Pei, H Chen et al. Self-assembled networked PbS distribution quantum dots for resistive switching and artificial synapse performance boost of memristors. Adv Mater, 31, 1805284(2019).

[98] W Xu, H Cho, Y H Kim et al. Organometal halide perovskite artificial synapses. Adv Mater, 28, 5916(2016).

[99] B Gholipour, P Bastock, C Craig et al. Amorphous metal-sulphide microfibers enable photonic synapses for brain-like computing. Adv Opt Mater, 3, 635(2015).

[100] K Pei, X Ren, Z Zhou et al. A high-performance optical memory array based on inhomogeneity of organic semiconductors. Adv Mater, 30, 1706647(2018).

[101] J Gorecki, V Apostolopoulos, J Y Ou et al. Optical gating of graphene on photoconductive Fe: LiNbO₃. ACS Nano, 12, 5940(2018).

[102] Y Shen, N C Harris, S Skirlo et al. Deep learning with coherent nanophotonic circuits. Nat Photonics, 11, 441(2017).

[103] S Dai, Y Zhao, Y Wang et al. Recent advances in transistor-based artificial synapses. Adv Funct Mater, 29, 1903700(2019).

[104] Y Wu, Y Wei, Y Huang et al. Capping CsPbBr₃ with ZnO to improve performance and stability of perovskite memristors. Nano Res, 10, 1584(2017).

[105] O Yizhar, L E Fenno, T J Davidson et al. Optogenetics in neural systems. Neuron, 71, 9(2011).

[106] X Liu, S Ramirez, P T Pang et al. Optogenetic stimulation of a hippocampal engram activates fear memory recall. Nature, 484, 381(2012).

[107] X Zhu, W D Lu. Optogenetics-inspired tunable synaptic functions in memristors. ACS Nano, 12, 1242(2018).

[108] L Fenno, O Yizhar, K Deisseroth. The development and application of optogenetics. Annu Rev Neurosci, 34, 389(2011).

[109] R H Kramer, A Mourot, H Adesnik. Optogenetic pharmacology for control of native neuronal signaling proteins. Nat Neurosci, 16, 816(2013).

[110] Y Sun, L Qian, D Xie et al. Photoelectric synaptic plasticity realized by 2D perovskite. Adv Funct Mater, 29, 1902538(2019).

[111] N J Jeon, J H Noh, W S Yang et al. Compositional engineering of perovskite materials for high-performance solar cells. Nature, 517, 476(2015).

[112] K G Lim, S Ahn, Y H Kim et al. Universal energy level tailoring of self-organized hole extraction layers in organic solar cells and organic-inorganic hybrid perovskite solar cells. Energy Environ Sci, 9, 932(2016).

[113] C Cheng, C Zhu, B Huang et al. Processing halide perovskite materials with semiconductor technology. Adv Mater Technol, 4, 1800729(2019).

[114] B Chamlagain, Q Li, N J Ghimire et al. Mobility improvement and temperature dependence in MoSe₂ field-effect transistors on parylene-C substrate. ACS Nano, 8, 5079(2014).

[115] G Skoblin, J Sun, A Yurgens. Encapsulation of graphene in parylene. Appl Phys Lett, 110, 053504(2017).

[116] M Kim, A Shah, C Li et al. Direct transfer of wafer-scale graphene films. 2D Mater, 4, 035004(2017).

[117] X Yang, J Wu, T Liu et al. Patterned perovskites for optoelectronic applications. Small Methods, 2, 1800110(2018).

[118] G Wang, D Li, H C Cheng et al. Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics. Sci Adv, 1, e1500613(2015).

[119] X He, P Liu, H Zhang et al. Patterning multicolored microdisk laser arrays of cesium lead halide perovskite. Adv Mater, 29, 1604510(2017).

[120] P Zhao, B J Kim, X Ren et al. Antisolvent with an ultrawide processing window for the one-step fabrication of efficient and large-area perovskite solar cells. Adv Mater, 30, 1802763(2018).

[121] Y K Ren, X H Ding, Y H Wu et al. Temperature-assisted rapid nucleation: a facile method to optimize the film morphology for perovskite solar cells. J Mater Chem A, 5, 20327(2017).

[122] S Sanchez, N Christoph, B Grobety et al. Efficient and stable inorganic perovskite solar cells manufactured by pulsed flash infrared annealing. Adv Energy Mater, 8, 1802060(2018).

[123] D Li, H C Cheng, Y Wang et al. The effect of thermal annealing on charge transport in organolead halide perovskite microplate field-effect transistors. Adv Mater, 29, 1601959(2017).

[124] Y Wang, M Li, H Li et al. Patterned wettability surface for competition-driving large-grained perovskite solar cells. Adv Energy Mater, 9, 1900838(2019).