In this paper， an F-shape electromagnetically induced transparency structure composed of one vertical indium antimonide （InSb） bar and two horizontal InSb bars is proposed. The electromagnetic properties of the model were calculated using the time-domain finite integration method. The calculation show that the vertical InSb bar functioned as the bright mode resonator in the electromagnetically induced transparency structure， while the two horizontal InSb bars functioned as dark mode resonators. To study the variation in the electromagnetically induced transparency window， we varied the distance between the two horizontal InSb bars and the distance between the vertical InSb bar and the horizontal InSb bars. We found that the electromagnetically induced transparency window changes from on to off. Meanwhile， on varying the temperature of InSb that is highly temperature-sensitive， the center frequency of the electromagnetically induced transparent window moved toward high frequencies to achieve active tuning of terahertz waves. This study has significant application prospects in optical signal processing， optical storage， and slow light devices.