Research for radiation-hardened high-voltage SOI LDMOS

Yanfei Li; Shaoli Zhu; Jianwei Wu; Genshen Hong; Zheng Xu

doi:10.1088/1674-4926/40/5/052401

[1]

[2] Y X Wang, R B Hu, R Z Li et al. Total dose effects on the matching properties of deep submicron MOS transistors. J Semicond, 35, 064007(2014).

[3] Zh H Tang, R K Liu, K Zh Tan et al. A novel terminal structure for total dose irradiation hardened of a P-VDMOS. J Semicond, 35, 054005(2014).

[4] Y Zh Zheng, W Lu, D Y Ren et al. Characteristics of high and low-dose-rate damage for domestic npn transistors of various emitter areas. Acta Physica Sinic, 58, 5572(2009).

[5] G I Zebrev, M G Drosdetsky, A M Galimov. Non-equilibrium carrier capture, recombination and annealing in thick insulators and their impact on radiation hardness. J Semicond, 37, 115001(2016).

[6] M L McLain, H J Barnaby, G Schlenvogt. Effects of channel implant variation on radiation-induced edge leakage currents in n-channel MOSFETs. IEEE Trans Nucl Sci, 64, 2235(2017).

[7] M R Shaneyfelt, P E Dodd, B L Draper et al. Challenges in hardening technologies using shallow-trench isolation. IEEE Trans Nucl Sci, 45, 2584(1998).

[8] M Gaillardin, M Martinez, S Girard et al. High total ionizing dose and temperature effects on micro- and nano-electronic devices. IEEE Trans Nucl Sci, 62, 1226(2015).

[9] L L Ding, H X Guo, W Chen et al. Study of radiation-induced leakage current between adjacent devices in a CMOS integrated circuit. J Semicond, 33, 064006(2012).

[10] B P He, Z J Wang, J K Sheng et al. Total ionizing dose radiation effects on NMOS parasitic transistors in advanced bulk CMOS technology devices. J Semicond, 37, 124003(2016).

[11] J Jiang, W Shu, K S Chong et al. Total ionizing dose (TID) effects on finger transistors in a 65 nm CMOS process. IEEE International Symposium on Circuits and Systems, 5(2016).

[12] X Zhou, P Luo, L Y He et al. A radiation-hard waffle layout for BCD power MOSFET. IEEE 12th International Conference on ASIC, 773(2017).

[13] J R Schwank, V Ferlet-Cavrois, M R Shaneyfelt et al. Radiation effects in SOI technologies. IEEE Trans Nucl Sci, 50, 522(2003).

[14] X W Han, L H Wu, Y Zhao et al. A radiation hardened SOI based FPGA. J Semicond, 32, 075012(2011).

[15] Y Huang, B H Li, X Zhao et al. An effective method to compensate total ionizing dose-induced degradation on double-SOI structure. IEEE Trans Nucl Sci, 65, 1532(2018).

[16] K Zhao, X Zhao, J T Gao et al. DSOI FET – A novel TID tolerant SOI transistor. IEEE International Conference on Solid-State and Integrated Circuit Technology, 1(2014).

[17] W L Warren, M R Shaneyfelt, D M Fleetwood, el at. Microscopic nature of border traps in MOS devices. IEEE Trans Nucl Sci, 41, 1817(1994).

[18] M Fleetwood Daniel. Evolution of total ionizing dose effects in MOS devices with Moore's Law scaling. IEEE Trans Nucl Sci, 65, 1465(2018).

[19] J R Schwank, N M Albuquerque, M R Shaneyfelt et al. Radiation effects in MOS oxides. IEEE Trans Nucl Sci, 55, 1833(2008).

[20] X W Cai, H Hai Ch, L X Wang et al. Gamma irradiation induced oxide trapped charge and interface charge in power VDMOS. J Funct Mater Devices, 14, 621(2008).