Nonlinear optical absorption properties of InP nanowires and applications as a saturable absorber

Junting Liu; Hongkun Nie; Bingzheng Yan; Kejian Yang; He Yang; Vladislav Khayrudinov; Harri Lipsanen; Baitao Zhang; Jingliang He

doi:10.1364/PRJ.389669

Journals >Photonics Research >Volume 8 >Issue 6 >Page 1035 > Article

Photonics Research
Vol. 8, Issue 6, 1035 (2020)

Nonlinear optical absorption properties of InP nanowires and applications as a saturable absorber

Junting Liu¹, Hongkun Nie¹, Bingzheng Yan¹, Kejian Yang^1、2, He Yang^3、4, Vladislav Khayrudinov³, Harri Lipsanen³, Baitao Zhang^1、2、*, and Jingliang He^1、2

Author Affiliations

¹State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

²Key Laboratory of Laser & Infrared System, Ministry of Education, Shandong University, Qingdao 266237, China

³Department of Electronics and Nanoengineering, Aalto University, Espoo FI-00076, Finland

⁴e-mail: yhyanghe@gmail.com

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DOI: 10.1364/PRJ.389669 Cite this Article Set citation alerts

Junting Liu, Hongkun Nie, Bingzheng Yan, Kejian Yang, He Yang, Vladislav Khayrudinov, Harri Lipsanen, Baitao Zhang, Jingliang He. Nonlinear optical absorption properties of InP nanowires and applications as a saturable absorber[J]. Photonics Research, 2020, 8(6): 1035 Copy Citation Text

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$(a) SEM image of as-prepared InP NWs sample on the quartz substrate. The inset is a higher-resolution SEM image, which shows the diameter of our NWs at ∼65 nm. (b) Raman spectrum of as-grown InP NWs excited by a 473 nm laser. (c) EDX measurement results of InP NWs along the growth direction which show the uniformity of the as-grown NWs. (d) High-resolution STEM image of InP NWs. The inset shows the selected area electron diffraction (SAED) pattern, which demonstrates the ZB crystal structure of our InP NWs sample.$

Fig. 1. (a) SEM image of as-prepared InP NWs sample on the quartz substrate. The inset is a higher-resolution SEM image, which shows the diameter of our NWs at ∼65 nm. (b) Raman spectrum of as-grown InP NWs excited by a 473 nm laser. (c) EDX measurement results of InP NWs along the growth direction which show the uniformity of the as-grown NWs. (d) High-resolution STEM image of InP NWs. The inset shows the selected area electron diffraction (SAED) pattern, which demonstrates the ZB crystal structure of our InP NWs sample.

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(a) Experimental setup of the open-aperture Z-scan measurement. (b) Open-aperture Z-scan measurement results. (c) Nonlinear transmittance of the prepared InP NWs.

Fig. 2. (a) Experimental setup of the open-aperture Z-scan measurement. (b) Open-aperture Z-scan measurement results. (c) Nonlinear transmittance of the prepared InP NWs.

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Fig. 3. (a) Experimental setup of the InP NWs based PQS Nd:YVO4 solid-state laser. (b) The relationship between the continuous-wave (CW) and PQS laser output power and the absorbed pump power. (c) The variation of the pulse repetition rate and the pulse width as functions of the absorbed pump power. (d) The typical PQS pulse profiles and pulse trains.

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Fig. 4. (a) Experimental setup of the ultrafast pump–probe measurement. (b) Ultrafast transient of InP NWs with a probe laser at 800 nm.

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Input Pulse Energy (μJ)	$β_{eff}$ (cm/MW)	$Im χ^{(3)}$ ( $\times 10^{- 7} esu$ )	$I_{s}$ ( $MW / {cm}^{2}$ )	$Δ R$	$α_{NS}$	$β_{eff}^{'}$ (cm/MW)
0.012	$- 304 \pm 1.3$	$- 3.43 \pm 0.015$	$80.9 \pm 0.4$	$0.121 \pm 0.001$	$0.109 \pm 0.003$	$0.016 \pm 0.001$
0.026	$- 272 \pm 2.1$	$- 3.07 \pm 0.024$	$80.2 \pm 0.3$	$0.12 \pm 0.002$	$0.1 \pm 0.002$	$0.077 \pm 0.002$
0.038	$- 236 \pm 1.6$	$- 2.66 \pm 0.018$	$80.3 \pm 0.5$	$0.122 \pm 0.001$	$0.109 \pm 0.001$	$0.13 \pm 0.01$
0.082	$- 116.5 \pm 1.4$	$- 1.3 \pm 0.027$	$90.38 \pm 0.4$	$0.11 \pm 0.003$	$0.106 \pm 0.002$	$0.27 \pm 0.03$
0.142	—	—	$90.6 \pm 0.7$	$0.123 \pm 0.002$	$0.106 \pm 0.002$	$4.2 \pm 0.1$
0.202	—	—	$85.87 \pm 0.3$	$0.132 \pm 0.001$	$0.109 \pm 0.001$	$9.9 \pm 0.3$