Properties Analysis of Ion-Implanted Planar Optical Waveguide in LiTaO3

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 17 >Issue 12 >Page 1709 > Article

Acta Optica Sinica
Vol. 17, Issue 12, 1709 (1997)

Properties Analysis of Ion-Implanted Planar Optical Waveguide in LiTaO₃

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Properties Analysis of Ion-Implanted Planar Optical Waveguide in LiTaO₃[J]. Acta Optica Sinica, 1997, 17(12): 1709 Copy Citation Text

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Abstract

The ion implanted planar optical waveguide in crystal LiTaO 3 was formed by implantation of He + at an energy of 2.8 MeV and with a dose of 1.4×10 16 ion/cm 2 at 300 K. The modes were observed and measured by prism coupling method. The refractive index profiles of the waveguide were calculated and compared before and after annealing. The damages on the crystal surface caused by the implantation of He + were firstly investigated by using RBS/channeling technique.

Keywords

RBS analysis refractive index ion-implanted optical waveguide

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