Xiaodan Wang, Yajuan Mo, Xionghui Zeng, Hongmin Mao, Jianfeng Wang, Ke Xu. Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion implantation[J]. Chinese Optics Letters, 2016, 14(5): 051602
- Chinese Optics Letters
- Vol. 14, Issue 5, 051602 (2016)
Fig. 1. Normalized room temperature cathodoluminescence spectra of virgin GaN and 5 × 10 15
Fig. 2. Normalized room temperature cathodoluminescence spectra of 1 × 10 15 Er / cm 2
Fig. 3. Normalized room temperature cathodoluminescence spectra of 1 × 10 15 Er / cm 2
Fig. 4. Room temperature cathodoluminescence spectra of Er-implanted GaN with different doses annealed at 1100°C. The accelerating voltage of the scanning electron microscope is 5 kV.
Fig. 5. Cathodoluminescence spectra of 1 × 10 15
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Table 1. Position and FWHM of Cathodoluminescence Peaks of Virgin GaN and Er-Implanted GaN with Different Dosesa
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Table 2. Position and FWHM of the Band-Edge Peaks of 1×1015 Er/cm2-Implanted GaN Before and After Annealinga
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